# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

ROHM EMF8 Data Sheet and Manual

Summary

The EMF8 Transistor package provides a highly efficient dual-transistor solution for integrated power management circuits. This single unit combines two independent transistors into one compact EMT6 shell, dramatically reducing mounting costs and physical area for power switching applications. The accompanying manual delivers comprehensive technical data required by engineers, including absolute maximum ratings, detailed electrical characteristics (like gain and breakdown voltages), transition frequencies ($f_T$), and performance curves crucial for robust circuit design across diverse operating conditions.

📄 Preview PAGE OF 5

Page 1 Text Content

Transistors

Power management (dual transistors) EMF8 2SC5585 and DTC144EE are housed independently in a EMT6 package.

Application Dimensions (Unit : mm)

Power management circuit

Features (4) (3)

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

Structure

Silicon epitaxial planar transistor ROHM : EMT6 Each lead has

same dimensions

Abbreviated symbol : F8

Equivalent circuits 0. 0. 1.

DTr2 Tr1

Package, marking, and packaging specifications

Type EMF8 Package EMT6 Marking F8 Code T2R

Basic ordering unit (pieces)

Rev.B 1/4

Page Summary Contents For ROHM EMF8 Data Sheet and Manual

Page 1 Transistors Power management (dual transistors) EMF8 2SC5585 and DTC144EE are housed independently in a EMT6 package. Application Dimensions (Unit : mm) Power management circuit Features (4) (3) 1) Po...
Page 2 Transistors Absolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol Limits Unit Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO IC m A Collector current ICP 1.0 Po...
Page 3 LL IO LT EMF8 sa t) LL IC IT TE IN IT ib (p F) (m LL TO TP IT ob (p F) Transistors Electrical characteristic curves Ta =1 Tr1 °C Ta =2 5° VCE=2V Ta=125°C VCE=2V Ta=25°C Pulsed Ta −4 0° Pulsed Pulsed T...
Page 4 LT EMF8 (o n) IN LT I( on ) ( Transistors VCC=5V 10m 1k VO=0.3V VO=5V 2m Ta=100°C Ta=100°C Ta=−40°C 25°C 200m Io OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.9 Input...
Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 5
File Size 83.80 KB
Published June 18, 2026
6 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

Can I use this component in life-critical systems like medical instruments?

No. For equipment requiring extremely high reliability, such as aerospace machinery or medical instruments, consult a sales representative first.

What is the maximum power dissipation limit per single element?

The total power dissipation (PC) is 150mW, but each individual element must not exceed 120mW.

What preventative measures should I take when integrating this transistor package?

You must account for derating characteristics and implement sufficient safety features, such as anti-flammability and fail-safe measures, in your design.