ROHM BU9888FV-W User Guide
Summary
The BU9888FV-W is a compact, high-reliability 256word×16bits serial EEPROM designed for data storage in embedded systems. Featuring excellent endurance and low power consumption, it offers robust functionality, including write mistake and low voltage protection. This technical manual provides comprehensive specifications on operating voltages (3.0–3.6V), detailed electrical characteristics, timing diagrams, and usage guidelines. It is intended for electronics engineers developing non-life-critical equipment such as consumer devices and automation systems requiring dependable, long-term data preservation.
Page 1 Text Content
High Reliability Serial EEPROMs
Microwire BUS BR93□□□family
BU9888FV-W No.11001EAT20
●Description BU9888FV-W is a serial EEPROM of serial 3-line interface method.
●Features 1) 256word×16bits architecture 4k bit serial EEPROM 2) Operating voltage range(3.0～3.6V) 3) Address auto increment function at read action 4) Write mistake prevention function Write prohibition at power on Write prohibition by command code Write mistake prevention function at low voltage 5) Program cycle auto delete and auto end function 6) Program condition display READY / BUSY 7) Low current consumption At write action(3.6V): Icc1 = 3.5m A(Max.) At read action(3.6V): Icc2 = 2.0m A(Max.) At standby action (3.6V) : ISB = 2.0μA(Max.) 8) Compact package SSOP-B8pin 9) Data retention for 40 years 10) Data rewrite up to 100,000 times 11) Data at shipment all addresses FFFFh
●Absolute maximum rating (Ta=25℃)
Parameter Symbol Ratings Unit
Supply Voltage Vcc -0.3～+6.5 V Power Dissipation Pd 300 *1 m W Storage Temperature Tstg -65 ～+125 ℃ Operating Temperature Topr -20 ～+85 ℃ Terminal Voltage － -0.3～Vcc+0.3 *2 V *1 Degradation is done at 3.0m W/℃ for operation above 25℃ *2 The Max value of Terminal Voltage is not over 6.5V
●EEPROM recommended operating condition
Parameter Symbol Ratings Unit
Supply Voltage Vcc 3.0～3.6 Input Voltage VIN 0 ～ Vcc
●Memory cell characteristics(Ta=25℃, Vcc = 3.0～3.6V)
Limits
Parameter Unit
Min. Typ. Max.
Erase/Write Cycle *1 100,000 － － Cycles Data Retention *1 40 － － Years *1 Not 100％ TESTED
www.rohm.com 2011.01 - Rev.A
© 2011 ROHM Co., Ltd. All rights reserved.
Page Summary Contents For ROHM BU9888FV-W User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 17 |
| File Size | 405.77 KB |
| Published | July 15, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What protection features does BU9888FV-W offer during writing?
Features include write mistake prevention, power-on prohibition, and low voltage write mistake prevention.
What is the recommended operating supply voltage range?
The defined operational voltage (Vcc) range is 3.0V to 3.6V.
How frequently can data be rewritten on this EEPROM?
The memory cell supports up to 100,000 rewrite cycles.
Can this chip be used for life-critical or safety systems?
No; it is not designed for equipment requiring an extremely high level of reliability (e.g., medical instruments or aerospace machinery).