ROHM BR25H010F-W User Guide
Summary
The BR25Hxxx-WC series is a reliable serial EEPROM designed for robust non-volatile memory storage via an SPI BUS interface. This family offers various capacities (1Kbit to 32Kbit) crucial for embedded systems needing data persistence and high reliability. The accompanying manual provides comprehensive technical documentation, detailing electrical characteristics, operating timings, and advanced features like write protection, low power consumption, and secure page writing. It is essential reading for electronics engineers and embedded developers who require dependable memory components for battery-powered or demanding applications.
Page 1 Text Content
Datasheet
Automotive Series Serial EEPROMs 125℃ SPI BUS ICs BR25xxxx Family
BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K) ●Description BR25Hxxx-WC series is a serial EEPROM of SPI BUS interface method. ●Features ●Packages W(Typ.) x D(Typ.) x H(Max) High speed clock action up to 5MHz (Max.) Wait function by HOLDB terminal. Part or whole of memory arrays settable as read only memory area by program. 2.5 to 5.5V single power source action most suitable for battery use. Page write mode useful for initial value write at
factory shipment. SOP8
Highly reliable connection by Au pad and Au wire. 5.00mm x 6.20mm x 1.71mm
For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) Auto erase and auto end function at data rewrite. Low current consumption At write action (5V) : 1.5m A (Typ.) At read action (5V) : 1.0m A (Typ.) At standby action (5V) : 0.1μA (Typ.) Address auto increment function at read action SOP-J8 Write mistake prevention function 4.90mm x 6.00mm x 1.65mm Write prohibition at power on. Write prohibition by command code (WRDI). Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0) Write mistake prevention function at low
TSSOP-B8
voltage.
3.00mm x 6.40mm x 1.20mm
Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0 Data kept for 40 years. Data rewrite up to 1,000,000times.
●Page write
Number of pages 16 Byte 32 Byte
BR25H010-WC BR25H080-WC
Product number BR25H020-WC BR25H160-WC
BR25H040-WC BR25H320-WC
●BR25Hxxx-WC series Capacity Bit format Type Power source voltage SOP8 SOP-J8 TSSOP-B8 1Kbit 128×8 BR25H010-WC 2.5 to 5.5V ● ● ● 2Kbit 256×8 BR25H020-WC 2.5 to 5.5V ● ● ● 4Kbit 512×8 BR25H040-WC 2.5 to 5.5V ● ● ● 8Kbit 1K×8 BR25H080-WC 2.5 to 5.5V ● ● ● 16Kbit 2K×8 BR25H160-WC 2.5 to 5.5V ● ● ● 32Kbit 4Kx8 BR25H320-WC 2.5 to 5.5V ● ●
○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays www.rohm.com
TSZ02201-0R1R0G100060-1-2© 2012 ROHM Co., Ltd. All rights reserved.
23.May.2012 Rev.001TSZ22111・14・001
Page Summary Contents For ROHM BR25H010F-W User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 31 |
| File Size | 835.93 KB |
| Published | June 04, 2026 |
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Frequently Asked Questions
What operating temperature range does this EEPROM support?
The operating temperature range is -40 to +125 °C.
What voltages are acceptable for powering the device?
It supports a single power source voltage ranging from 2.5V to 5.5V.
What protection mechanisms prevent unauthorized writes?
Protection includes write prohibition by command code (WRDI), WPB pin, and status registers.
How durable is the stored data and how many times can it be rewritten?
Data is kept for 40 years and can be rewritten up to 1,000,000 times.