ROHM 2SB1733 Owner's Manual

2SB1733

Transistors

General purpose amplification (−30V, −1A) 2SB1733

Application Dimensions (Unit : mm)

Low frequency amplifier Driver

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −350m V at Ic = −500m A / IB = −25m A

ROHM :TUMT3 Abbreviated symbol : EW (1) Base

(2) Emitter (3) Collector

Absolute maximum ratings (Ta=25°C) Packaging specifications

Parameter Symbol Limits Unit Package Taping 0. 2M ax

Collector-base voltage VCBO −30

Type Code TL

Collector-emitter voltage VCEO −30

Basic ordering unit (pieces)

Emitter-base voltage VEBO −6

2SB1733

IC −1

Collector current

ICP −2 ∗1 ∗2

Power dissipation PC

Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C ∗1 Single pulse, PW=1ms ∗2 Each Terminal Mounted on a Recommended land pattern ∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −30 IC=−10µA

Collector-emitter breakdown voltage BVCEO −30 IC=−1m A

Emitter-base breakdown voltage BVEBO −6 IE=−10µA

Collector cutoff current ICBO −100 n A VCB=−30V

Emitter cutoff current IEBO −100 n A VEB=−6V

Collector-emitter saturation voltage VCE(sat) −150 −350 m V IC=−500m A, IB=−25m A DC current gain h FE VCE=−2V, IC=−100m A

Transition frequency f T MHz VCE=−2V, IE=100m A, f=100MHz Corrector output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz

∗ Pulsed

Rev.B 1/2