Philips PBSS4320T 20V Low Vce(Sat) NPN Transistor Data Sheet
Summary
Product specification datasheet (August 2002) for the Philips PBSS4320T 20V NPN low VCEsat transistor in SOT23 plastic package. Features low collector-emitter saturation voltage with equivalent ON-resistance of 105 milliohms, high collector current capability (2A DC, 3A peak, 5A single pulse), total power dissipation up to 1.2W, and transition frequency of 130MHz. Applications include power management, DC/DC converters, supply line switching, battery chargers, and LDO voltage regulation. PNP complement: PBSS5320T.
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PBSS4320T V low VCEsat NPN transistor Product specification Aug
Page Summary Contents For Philips PBSS4320T 20V Low Vce(Sat) NPN Transistor Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 73.00 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What are the primary applications for the PBSS4320T?
It is intended for power management applications, such as low and medium-power DC/DC converters and battery chargers.
What key characteristic makes this transistor efficient to use?
It features a low collector-emitter saturation voltage (VCesat), which significantly improves efficiency due to reduced heat generation.
What is the maximum continuous DC collector current rating?
The collector current ($I_C$) can handle up to 2 A under specified conditions.
Which part number serves as its complementary transistor?
The PNP complement of this NPN transistor is PBSS5320T.