PHILIPS BSH121 User Guide / Technical Specifications
Summary
This BSH121 component is a high-performance N-channel power MOSFET featuring advanced TrenchMOS technology in a compact SOT323 surface mount package. The detailed product specification datasheet provides electrical engineers and circuit designers with comprehensive data, including pinning information, quick reference graphs, absolute maximum ratings, thermal impedance curves, and dynamic characteristics. It is ideal for implementing energy-efficient solutions in battery management systems, high-speed switching circuits, and logic level translation applications.
Page 1 Text Content
查询BSH121供应商
BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™1 technology.
Product availability: BSH121 in SOT323.
2. Features
Trench MOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package.
3. Applications
Battery management High speed switch Logic level translator.
4. Pinning information Table 1: Pinning - SOT323, simplified outline and symbol Pin Description Simplified outline Symbol
gate (g) source (s) drain (d)
03ab30
MBC870Top view
SOT323 N-channel MOSFET
1. Trench MOS is a trademark of Royal Philips Electronics.
Page Summary Contents For PHILIPS BSH121 User Guide / Technical Specifications
Manual Details
| Brand | Philips |
|---|---|
| Pages | 13 |
| File Size | 109.02 KB |
| Published | July 10, 2026 |
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