PHILIPS BSH203 User Guide and Technical Specifications

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Philips Semiconductors Product specification

P-channel enhancement mode BSH203 MOS transistor

FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = -30 V • Fast switching • Logic level compatible ID = -0.47 A • Subminiature surface mount package RDS(ON) ≤ 1.1 Ω (VGS = -2.5 V)

VGS(TO) ≥ 0.4 V

GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has low gate

threshold voltage and extremely Top view

fast switching making it ideal for source battery powered applications and high speed digital interfacing. drain

The BSH203 is supplied in the SOT23 subminiature surface mounting package.

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage -30 VDGR Drain-gate voltage RGS = 20 kΩ -30 VGS Gate-source voltage ± 8 ID Drain current (DC) Ta = 25 ˚C -0.47

Ta = 100 ˚C -0.3

IDM Drain current (pulse peak value) Ta = 25 ˚C -1.9 Ptot Total power dissipation Ta = 25 ˚C 0.417

Ta = 100 ˚C 0.17

Tstg, Tj Storage & operating temperature - 55 ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-a Thermal resistance junction to FR4 board, minimum K/W

ambient footprint

August 1998 Rev 1.000