Philips BLF900-110; BLF900S-110 Base Station LDMOS Transistors User Manual / Data Sheet

Summary

This comprehensive datasheet details the BLF900-110/BLF900S-110 base station LDMOS transistors. Serving as high-efficiency RF power amplifiers for GSM, EDGE, and CDMA systems, these components are essential for telecom infrastructure operating across 800 to 1000 MHz. The manual provides complete technical specifications, performance data (including power gain and ACPR), thermal characteristics, packaging details (SOT502A/B), and rigorous electrical ratings necessary for professional engineers designing robust base station equipment.

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Philips BLF900-110; BLF900S-110 Base Station LDMOS Transistors User Manual / Data Sheet - Page 1

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Page 1 Text Content

查询BLF900-110供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BLF900-110; BLF900S-110 Base station LDMOS transistors Product specification Feb Supersedes data of 2003 Sep 22

Page Summary Contents For Philips BLF900-110; BLF900S-110 Base Station LDMOS Transistors User Manual / Data Sheet

Page 1 查询BLF900-110供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF900-110; BLF900S-110 Base station LDMOS transistors Product specification Feb Supersedes data of 2003 Sep 22

Page 2 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 FEATURES APPLICATIONS Typical CDMA IS95 performance at standard settings RF power amplifier for GSM,...

Page 3 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BLF900-110 Flanged LDMOST ceramic ...

Page 4 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 APPLICATION INFORMATION RF performance in common source class-AB circuit. VDS V; MHz; Th °C; unless ...

Page 5 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 MLE343 MLE344 handbook, halfpage handbook, halfpage Gp ηD Gp ηD (d B) Gp Pout (W) PL(PEP) (W) VDS V;...

Page 6 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 MLE348 MLE349 1.5 handbook, halfpage handbook, halfpage ZI ri ZL (Ω) (Ω) RI f (GHz) f (GHz) Class-AB...

Page 7 hi te xt is er in hi te to fo rc la nd sc ap pa ge to ro ta te co rr ec tly he br ow si ng th ro ug th pd f i th cr ob at ea de r. hi te xt is er in _w hi te to fo rc la nd sc ap pa ge to be ro ta te ...

Page 8 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 PHILIPS PHILIPS 900 MHz Input 900 MHz Output Rev. 1 Rev. 1 L1 Vdd R1 R3 C8 PHILIPS PHILIPS 900 MHz I...

Page 9 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 List of components (see Figs and 12) COMPONENT DESCRIPTION VALUE DIMENSIONS C1 multilayer ceramic ch...

Page 10 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 PACKAGE OUTLINES Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A w1 BM 10 mm scale...

Page 11 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 Earless flanged LDMOST ceramic package; 2 leads SOT502B 10 mm scale DIMENSIONS (millimetre dimension...

Page 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 DATA SHEET STATUS DATA SHEET PRODUCT LEVEL DEFINITION STATUS(1) STATUS(2)(3) Objective data Developm...

Page 13 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 For sales offices addresses send e-mail to: sal...

Manual Details

Brand	Philips
Pages	13
File Size	128.19 KB
Published	July 10, 2026

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Frequently Asked Questions

What is the primary application for BLF900-110?

It is a 110 W LDMOS power transistor used as an RF power amplifier for base stations in CDMA IS95, GSM, and EDGE systems.

What are the package types available for these transistors?

The options include SOT502A (for BLF900-110) and SOT502B (for BLF900S-110).

What is the maximum storage temperature rating?

The transistor can withstand a storage temperature range from -65 °C to +150 °C.

How does the ACPR performance compare for 2-tone and CDMA operation at 750 kHz?

For the CDMA (IS95) mode, the Adjacent Channel Power Ratio (ACPR) is -45 dBc at a bandwidth of 30 kHz.