PHILIPS BFG590 BFG590 X Data Sheet User Guide
Summary
Product specification datasheet (October 1998) for the Philips BFG590 and BFG590/X NPN 5GHz wideband transistors in SOT143B plastic package. Features high power gain of 13 dB and insertion gain of 11 dB at 900MHz, low noise figure, transition frequency of 5GHz, gold metallization for reliability, DC current gain of 50-280 at 35mA, and 400mW power dissipation. Applications include MATV/CATV amplifiers and RF communications in GHz range. Collector current 200mA max, VCEO 15V max.
Page 1 Text Content
查询BFG590X供应商
DISCRETE SEMICONDUCTORS
DATA SHEET book, halfpage
BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Oct Supersedes data of 1995 Sep
Page Summary Contents For PHILIPS BFG590 BFG590 X Data Sheet User Guide
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 83.88 KB |
| Published | June 16, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What applications are these NPN transistors suitable for?
They are ideally suited for MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range.
What is the transistor's specified maximum total power dissipation?
The maximum total power dissipation ($ ext{P}_{ ext{tot}}$) listed under typical conditions increases from 0 to 400 mW (depending on the curve parameters).
What are the key performance specifications, such as its frequency limits?
It features a high transition frequency ($f_T$) ranging from -5 to GHz and can achieve maximum unilateral power gain at 900 MHz.