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Philips BFG505 BFG505 X Data Sheet

Summary

The BFG505/X is a high-performance NPN wideband transistor, engineered for demanding RF front-end applications up to 9 GHz. This manual provides comprehensive technical specifications, including low noise figures and high power gain constants. It is ideal for professionals designing sophisticated systems such as analog/digital cellular phones, radar detectors, pagers, and SATV tuners.

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查询BFG505X供应商

DISCRETE SEMICONDUCTORS

DATA SHEET book, halfpage

BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification Oct Supersedes data of September 1995

Page Summary Contents For Philips BFG505 BFG505 X Data Sheet

Page 1 查询BFG505X供应商 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification Oct Supersedes data of September 1995
Page 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES PINNING High power gain DESCRIPTION Low noise figure BFG505 BFG505/X High transition frequency col...
Page 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. ...
Page 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO...
Page 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X MRA639 MRA640 handbook, halfpage handbook, halfpage h FE Cre IC (m A) VCB (V) VCE V. IC 0; f MHz. Fig.3 DC ...
Page 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X MRA643 MRA644 handbook, halfpage handbook, halfpage gain gain IC (m A) f (MHz) VCE 6 V; f GHz. VCE V; IC 1....
Page 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X MRA651 andbook, halfpage IC = 1.25 m A 5 m A Fmin Gass (d B) (d B) f (MHz) VCE V. Fig.11 Minimum noise figu...
Page 8 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, full pagewidth pot. unst. 90° region Fmin = 1. 9 d B stability circle MRA653 Zo Ω. VCE V; Ic 1.25...
Page 9 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, full pagewidth 90° 3 GHz 40 MHz MRA646 VCE V; IC m A. −90° Zo Ω. Fig.14 Common emitter input refl...
Page 10 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X handbook, full pagewidth 90° 3 GHz 40 MHz MRA648 VCE V; IC m A. Fig.16 Common emitter reverse transmission ...
Page 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B e1 detail X scale DIMENSIONS (mm are the o...
Page 12 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specification...
Page 13 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X NOTES
Page 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X NOTES
Page 15 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X NOTES
Page 16 Philips Semiconductors – a worldwide company Argentina: see South America Middle East: see Italy Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg....

Manual Details

Brand Philips
Pages 16
File Size 127.41 KB
Published July 06, 2026
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Frequently Asked Questions

What types of electronics use this NPN transistor?

It is suitable for RF front end applications in devices such as cellular telephones, pagers, and radar detectors.

What are the maximum operating limits regarding power?

The total power dissipation (Ptot) limit should not exceed 150 mW at recommended ambient temperatures.

In what physical package is the transistor provided?

It is supplied in a 4-pin dual-emitter SOT143B plastic package.

What characteristic indicates its performance concerning noise?

The datasheet notes it features a low noise figure, which decreases from -1.2 dB at 900 MHz to -1.9 dB at 2 GHz.