Panasonic MA3J744 Data Sheet

查询MA3J744供应商 Schottky Barrier Diodes (SBD)

MA3J744 Silicon epitaxial planar type

Unit : mm

For super-high speed switching circuit

For small current rectification 0.425 1.25 ± 0.1 0.425

Features Small S-mini type package allowing high-density mounting Allowing to rectify under (IF(AV) = 200 m A) condition

Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR Repetitive peak reverse voltage VRRM

1 : Anode 2 : NC

Average forward current IF(AV) m A

3 : Cathode

Peak forward current IFM m A EIAJ : SC-70

Flat S- Mini Type Package (3-pin)

Non-repetitive peak forward IFSM surge current*

Marking Symbol: M1M

Junction temperature Tj °C Internal Connection

Storage temperature Tstg −55 to +150 °C

Note) The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

Electrical Characteristics Ta = 25°C 0. 0.

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) IR VR = 30 V µA Forward voltage (DC) VF IF = 200 m A 0.55 Terminal capacitance Ct VR = 0 V, f = 1 MHz p F Reverse recovery time* trr IF = IR = 100 m A ns

Irr = 10 m A, RL = 100 Ω

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz 3. trr measuring instrument

Bias Application Unit N-50BU Input Pulse Output Pulse

tr tp

10% trr

90% VR

Irr = 10 m A

tp = 2 µs IF = 100 m A tr = 0.35 ns IR = 100 m A

Pulse Generator W.F.Analyzer

δ = 0.05 RL = 100 Ω

(PG-10N) (SAS-8130) Rs = 50 Ω Ri = 50 Ω