Panasonic 2SK0664 (2SK664) Data Handbook

查询2SK0664供应商 Silicon MOS FETs (Small Signal)

2SK0664 (2SK664) Silicon N-Channel MOS FET

unit: mm

For switching 0.3+0.1 –0.0 0.15+0.10 –0.05

Features High-speed switching S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing.

Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Ratings Unit Drain to Source breakdown voltage VDSS

1: Gate

Gate to Source voltage VGSO

2: Source EIAJ: SC-70 Drain current ID m A 3: Drain SMini3-G1 Package

Max drain current IDP m A

Marking Symbol: 3N

Allowable power dissipation PD m W

Internal Connection

Channel temperature Tch °C Storage temperature Tstg −55 to +150 °C

to .1 0. 9± 0. 1. 0. (0 .4

Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 10V, VGS = 0 µA Gate to Source leakage current IGSS VGS = 8V, VDS = 0 µA 0. 2± 0. Drain to Source breakdown voltage VDSS ID = 100µA, VGS = 0 Gate threshold voltage Vth ID = 100µA, VDS = VGS 1.5 3.5 Drain to Source ON-resistance RDS(on) ID = 20m A, VGS = 5V Forward transfer admittance | Yfs | ID = 20m A, VDS = 5V, f = 1k Hz m S Input capacitance (Common Source) Ciss p F Output capacitance (Common Source) Coss VDS = 5V, VGS = 0, f = 1k Hz p F Reverse transfer capacitance (Common Source) Crss p F Turn-on time ton VDD = 5V, VGS = 0 to 5V, RL = 200Ω ns Turn-off time toff VDD = 5V, VGS = 5 to 0V, RL = 200Ω ns * ton, toff measurement circuit

Vout 200Ω

VGS = 5V

VDD = 5V Vout

ton toff

Note) The part number in the parenthesis shows conventional part number.