Panasonic 2SK0620 (2SK620) Data Handbook

查询2SK0620供应商 Silicon MOS FETs (Small Signal)

2SK0620 (2SK620) Silicon N-Channel MOS FET

unit: mm

For switching 1.5 –0.050.65±0.15 0.65±0.15

Features High-speed switching Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

Absolute Maximum Ratings (Ta = 25°C)

Parameter Symbol Ratings Unit 0.1 to 0.3 0.4±0.2

Drain to Source breakdown voltage VDSS Gate to Source voltage VGSO

1: Gate JEDEC: TO-236

Drain current ID m A

2: Source EIAJ: SC-59

Max drain current IDP m A 3: Drain Mini Type Package (3-pin) Allowable power dissipation PD m W

Marking Symbol: 3N 0.

Channel temperature Tch °C

Storage temperature Tstg −55 to +150 °C Internal Connection 1. –0 .1 9± 0.

Electrical Characteristics (Ta = 25°C) to .1

Parameter Symbol Conditions min typ max Unit

Drain to Source cut-off current IDSS VDS = 10V, VGS = 0 µA 1.

Gate to Source leakage current IGSS VGS = 8V, VDS = 0 n A Drain to Source breakdown voltage VDSS ID = 100µA, VGS = 0 Gate threshold voltage Vth ID = 100µA, VDS = VGS 1.5 3.5 Drain to Source ON-resistance RDS(on) ID = 20m A, VGS = 5V Forward transfer admittance | Yfs | ID = 20m A, VDS = 5V, f = 1k Hz m S Input capacitance (Common Source) Ciss p F Output capacitance (Common Source) Coss VDS = 5V, VGS = 0, f = 1MHz p F Reverse transfer capacitance (Common Source) Crss p F Turn-on time ton VDD = 5V, VGS = 0 to 5V, RL = 200Ω ns Turn-off time toff VDD = 5V, VGS = 5 to 0V, RL = 200Ω ns * ton, toff measurement circuit

Vout 200Ω

VGS = 5V

VDD = 5V Vout

ton toff

Note) The part number in the parenthesis shows conventional part number.