Panasonic 2SD1772, 2SD1772A Data Sheet
Summary
These power transistors are essential components designed for high-power amplification circuits in commercial and industrial electronics. This manual provides comprehensive technical specifications, including operational limits, thermal characteristics (ASO), switching parameters, and efficiency data across various ambient temperatures. It is an indispensable resource for electrical engineers, circuit designers, and hardware manufacturers who require precise performance metrics to select or validate solid-state components for demanding applications like power units and deflection systems.
Page 1 Text Content
查询2SD1772供应商 Power Transistors
2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification
Unit: mm
For TV vertical deflection output
Complementary to 2SB1192 and 2SB1192A
Features
Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol Ratings Unit Collector to 2SD1772
VCBO 2.54±0.25
base voltage 2SD1772A
Collector to 2SD1772
emitter voltage 2SD1772A 1:Base
2:Collector
Emitter to base voltage VEBO .0 ±0 .5 .7 ±0 .3
3:Emitter ol de ip 4. 7. 5± 0. 0. 7± 0.
Peak collector current ICP TO–220 Full Pack Package(a) Collector current IC
Collector power TC=25°C
dissipation Ta=25°C Junction temperature Tj ˚C
Storage temperature Tstg –55 to +150 ˚C
Electrical Characteristics (TC=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 200V, IE = 0 µA Emitter cutoff current IEBO VEB = 4V, IC = 0 µA
Collector to emitter 2SD1772
VCEO IC = 5m A, IB = 0
voltage 2SD1772A
Emitter to base voltage VEBO IE = 0.5m A, IC = 0
h FE1 VCE = 10V, IC = 100m A
Forward current transfer ratio
h FE2 VCE = 10V, IC = 300m A
Base to emitter voltage VBE VCE = 10V, IC = 300m A Collector to emitter saturation voltage VCE(sat) IC = 500m A, IB = 50m A
Transition frequency f T VCE = 10V, IC = 100m A, f = 1MHz MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz p F
*h FE1 Rank classification
Rank h FE1 60 to 140 100 to 240
Page Summary Contents For Panasonic 2SD1772, 2SD1772A Data Sheet
Manual Details
| Brand | Panasonic |
|---|---|
| Pages | 2 |
| File Size | 30.48 KB |
| Published | June 01, 2026 |
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Frequently Asked Questions
What is the primary function of the 2SD1772 transistor?
It is a Silicon NPN triple diffusion planar type used for power amplification and TV vertical deflection output.
How should I calculate the maximum allowable power dissipation (PC)?
The recommended calculation depends on whether you use a heat sink, following values like 25W (at TA=25°C, no heat sink) or lower if mounted with an aluminum heat sink.
What is the specified Collector to Emitter saturation voltage (CE(sat))?
For the 2SD1772, CE(sat) is listed as 1V when used at I = 500mA and I = 50mA. For the 2SD1772A, it's also specified as 1V under these conditions.
What are the absolute maximum ratings for this component?
The Collector to Base voltage (V_CB) max is 200V, and the Emitter to Base voltage (V_EBO) min/max ranges are provided (e.g., V_EBO min: 180V, max: 200V).