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Panasonic 2SC1360, 2SC1360A User's Manual

Summary

The 2SC1360 and 2SC1360A are silicon NPN epitaxial planar transistors designed for intermediate frequency amplification in TV image circuits. Featuring high transition frequency (300MHz typical), large collector power dissipation (1W), and excellent power gain (22-30dB at 58MHz), they are housed in TO-92L packages. The 2SC1360A variant offers higher voltage ratings (60V vs 50V). Electrical characteristics include low collector-emitter saturation voltage and high current transfer ratio. Target users are analog circuit designers and RF engineers developing television receivers, IF amplifier stages, and general-purpose high-frequency amplification circuits.

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查询2SC1360供应商 Transistor

2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image

Unit: mm

Features High transition frequency f T. Large collector power dissipation PC.

Absolute Maximum Ratings (Ta=25˚C)

Parameter Symbol Ratings Unit Collector to 2SC1360

base voltage 2SC1360A

Collector to 2SC1360

emitter voltage 2SC1360A +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.271.27

Emitter to base voltage VEBO

1:Emitter

Collector current IC m A 2:Collector

3:Base

Collector power dissipation PC

EIAJ:SC–51 Junction temperature Tj ˚C TO–92L Package

Storage temperature Tstg –55 ~ +150 ˚C

Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit

Collector cutoff current ICBO VCB = 20V, IE = 0 n A

Collector to base 2SC1360

VCBO IC = 100µA, IE = 0

voltage 2SC1360A

Collector to emitter 2SC1360

VCEO IC = 1m A, IB = 0

voltage 2SC1360A Emitter to base voltage VEBO IE = 100µA, IC = 0 Forward current transfer ratio h FE VCB = 10V, IE = –10m A Collector to emitter saturation voltage VCE(sat) IC = 20m A, IB = 2m A 0.4

Transition frequency f T VCB = 10V, IE = –10m A, f = 100MHz MHz Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1m A, f = 10.7MHz 1.5 p F

Power gain PG VCB = 10V, IE = –10m A, f = 58MHz d B

Page Summary Contents For Panasonic 2SC1360, 2SC1360A User's Manual

Page 1 查询2SC1360供应商 Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm Features High transition frequency f T. Large collector power ...
Page 2 Transistor 2SC1360, 2SC1360A ol le ct or ut pu t c ap ac ita nc ol le ct or to itt er at ur at io vo lta ge ol le ct or ow er is si pa tio ob (s at PC — Ta IC — VCE IC — VBE 25˚C VCE=10V 1.0 IB=2.0m A...

Manual Details

Brand Panasonic
Pages 2
File Size 28.32 KB
Published June 16, 2026
2 views

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Frequently Asked Questions

What are the typical applications for the 2SC1360 transistor?

It is designed for intermediate frequency amplification in TV image units.

What is the maximum operating junction temperature for the 2SC1360?

The maximum junction temperature Tj is 150°C.

What is the maximum collector current (Ic) rating for the 2SC1360?

The absolute maximum collector current Ic is 50 mA.

What is the key difference between the 2SC1360 and the 2SC1360A?

The 2SC1360A has higher collector-to-base (VCBO) and collector-to-emitter (VCEO) voltage ratings.

What is the typical transition frequency (fT) for this transistor?

The typical transition frequency fT is 300 MHz under specified test conditions.