Panasonic 2SC1318A User Guide and Manual

查询2SC1318A供应商 Transistor

2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification

Unit: mm

Complementary to 2SA720A

Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

Absolute Maximum Ratings (Ta=25˚C)

Parameter Symbol Ratings Unit

Collector to base voltage VCBO 1.27 1.27

Collector to emitter voltage VCEO Emitter to base voltage VEBO

1:Emitter

Peak collector current ICP

2:Collector

Collector current IC 0.5 3:Base .5 ±0 .5 5. 1± 0.

JEDEC:TO–92

Collector power dissipation PC m W

EIAJ:SC–43A

Junction temperature Tj ˚C Storage temperature Tstg –55 ~ +150 ˚C

Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 20V, IE = 0 0.1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 Collector to emitter voltage VCEO IC = 2m A, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0

*1 h FE1 VCE = 10V, IC = 150m A*2

Forward current transfer ratio

h FE2 VCE = 10V, IC = 500m A*2

Collector to emitter saturation voltage VCE(sat) IC = 300m A, IB = 30m A*2 0.2 0.6 Base to emitter saturation voltage VBE(sat) IC = 300m A, IB = 30m A*2 0.85 1.5 Transition frequency f T VCB = 10V, IE = –50m A, f = 200MHz MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz p F

*2 Pulse measurement

*1h FE1 Rank classification

h FE1 85 ~ 170 120 ~ 240 170 ~ 340