Panasonic 2SB0938 2SB0938A Data Sheet

Power Transistors

2SB0938, 2SB0938A (2SB938, 2SB938A) Silicon PNP epitaxial planar type Darlington

Unit: mm For power amplification and switching 8.5±0.2 3.4±0.3

Complementary to 2SD1261 and 2SD1261A Features High foward current transfer ratio h FE

High-speed switching 1.5max. 1.1max.

N type package enabling direct soldering of the radiating fin to

0.8±0.1 0.5max.

the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (TC=25˚C)

1:Base

Parameter Symbol Ratings Unit

2:Collector 3:Emitter

Collector to 2SB0938 –60

VCBO N Type Package

base voltage 2SB0938A –80

Unit: mm 8.5±0.2 3.4±0.3

Collector to 2SB0938 –60

VCEO 6.0±0.3 1.0±0.1

emitter voltage 2SB0938A –80

Emitter to base voltage VEBO –5 Peak collector current ICP –8 Collector current IC –4

Collector power TC=25°C

2.54±0.3 0 to 0.4

PC 4. 4± 0. .0 ±0 .3 .5 in .0 ±0 .3 1.1 max. dissipation Ta=25°C 1.3 5.08±0.5 2. 2. 1. 5± 0.

Junction temperature Tj ˚C

1:Base 2:Collector

Storage temperature Tstg –55 to +150 ˚C

3:Emitter N Type Package (DS) 1. 5+ –0 .4

Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SB0938 VCB = –60V, IE = 0 –200

ICBO 0. µA

current 2SB0938A VCB = –80V, IE = 0 –200

Collector cutoff 2SB0938 VCE = –30V, IB = 0 –500

ICEO µA

current 2SB0938A VCE = –40V, IB = 0 –500

Emitter cutoff current IEBO VEB = –5V, IC = 0 –2 m A

Collector to emitter 2SB0938 –60

VCEO IC = –30m A, IB = 0

voltage 2SB0938A –80

h FE1 VCE = –3V, IC = – 0.5A

Forward current transfer ratio

h FE2 VCE = –3V, IC = –3A Base to emitter voltage VBE VCE = –3V, IC = –3A –2.5

IC = –3A, IB = –12m A –2

Collector to emitter saturation voltage VCE(sat)

IC = –5A, IB = –20m A –4

Transition frequency f T VCE = –10V, IC = – 0.5A, f = 1MHz MHz Turn-on time ton 0.3 µs Storage time tstg IC = –3A, IB1 = –12m A, IB2 = 12m A µs Fall time tf 0.5 µs

*h FE2 Rank classification

Internal Connection

Rank h FE2 2000 to 5000 4000 to 10000