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Panasonic 2SA1123 User Guide and Manual

Summary

The 2SA1123 is a high-performance Silicon PNP transistor designed for robust low-frequency amplification applications, particularly in pre-driver stages of specialized 20-40W output amplifiers. This comprehensive technical datasheet provides detailed electrical specifications, including Absolute Maximum Ratings and critical operational parameters (such as $V_{CEO}$, transition frequency, and output capacitance), across various temperature conditions. It is essential reading for electronics engineers and circuit designers utilizing this transistor in complementary pairs with the 2SC2631 component to maximize amplifier efficiency and reliability.

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查询2SA1123供应商 Transistor

2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification

Unit: mm

Complementary to 2SC2631

Features Satisfactory foward current transfer ratio h FE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is opti- mum for the pre-driver stage of a 20 to 40W output amplifier.

+0.2 +0.2 Absolute Maximum Ratings (Ta=25˚C) –0.1 0.45 –0.10.45

Parameter Symbol Ratings Unit Collector to base voltage VCBO –150

Collector to emitter voltage VCEO –150 1:Emitter 2:Collector

Emitter to base voltage VEBO –5 .5 ±0 .5 5. 1± 0.

3:Base

JEDEC:TO–92

Peak collector current ICP –100 m A

EIAJ:SC–43A

Collector current IC –50 m A Collector power dissipation PC m W Junction temperature Tj ˚C Storage temperature Tstg –55 ~ +150 ˚C

Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –100V, IE = 0 –1 µA Collector to emitter voltage VCEO IC = –0.1m A, IB = 0 –150 Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 Forward current transfer ratio h FE VCE = –5V, IC = –10m A Collector to emitter saturation voltage VCE(sat) IC = –30m A, IB = –3m A –1 Transition frequency f T VCB = –10V, IE = 10m A, f = 200MHz MHz

Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz p F

VCE = –10V, IC = –1m A, GV = 80d B

Noise voltage NV m V

Rg = 100kΩ, Function = FLAT

*h FE Rank classification

Rank h FE 130 ~ 220 185 ~ 330 260 ~ 450

Page Summary Contents For Panasonic 2SA1123 User Guide and Manual

Page 1 查询2SA1123供应商 Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SC2631 Features Satisfactory foward current transfer...
Page 2 Transistor 2SA1123 ol le ct or ut pu t c ap ac ita nc ol le ct or to itt er at ur at io vo lta ge ol le ct or ow er is si pa tio ob (s at PC Ta IC VCE IC VBE VCE=–5V Ta=25˚C 0.8 Ta=75˚C –25˚C IB=–500µ...