Panasonic 2SA0921(2SA921) User Guide and Manual

查询2SA0921供应商 Transistors

2SA0921 (2SA921) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Unit: mm

Complementary to 2SC1980 5.0±0.2 4.0±0.2

Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV

Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) VCBO −120 2.5+0.6 –0.2 2.5 –0.2

Collector-emitter voltage (Base open) VCEO −120 Emitter-base voltage (Collector open) VEBO −5

1: Emitter Collector current IC −20 m A 2: Collector 3: Base

Peak collector current ICP −50 m A

TO-92-B1 Package

Collector power dissipation PC m W Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C

Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −120 Collector-emitter voltage (Base open) VCEO IC = −1 m A, IB = 0 −120 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 −100 n A Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 −1 µA Forward current transfer ratio * h FE VCE = −5 V, IC = −2 m A Collector-emitter saturation voltage VCE(sat) IC = −20 m A, IB = −2 m A − 0.6 Transition frequency f T VCB = −5 V, IE = 2 m A, f = 200 MHz MHz Noise voltage NV VCE = −40 V, IC = −1 m A, GV = 80 d B m V

Rg = 100 kΩ, Function = FLAT

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Rank classification

Rank h FE 180 to 360 260 to 520 360 to 700

Note) The part number in the parenthesis shows conventional part number.

SJC00007BED 1Publication date: January 2003