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Motorola MPC2104 MPC2105 MPC2106 MPC2107 Specifications

Summary

These advanced SRAM cache modules provide high-performance, burstable L2 cache memory designed specifically for the PowerPC 60x microprocessor family. This resource provides comprehensive technical specifications and detailed documentation for the MPC2104 through MPC2107 series, covering synchronous and asynchronous BurstRAM architectures. Perfect for embedded systems engineers and hardware designers, this manual details pin assignments, voltage compatibility (including low-voltage paths), and operational capabilities required to integrate these plug-and-play cache solutions into PReP/CHRP compliant platforms.

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SEMICONDUCTOR TECHNICAL DATA by MPC2104/D

Advance Information MPC2104 256KB and 512KB Burst RAM MPC2105 Secondary Cache Modules for MPC2106 Power PC PRe P/CHRP Platforms MPC2107

The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the Power PC 60x microprocessor family in conformance with the Power PC Reference Platform (PRe P) and the Power PC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchronous data RAMs. The MPC2104, MPC2105, and MPC2106 utilize synchronous Burst RAMs. The modules are configured as 32K x 72, 64K x 72, and 128K x 72 bits in a 182 (91 x 2) pin DIMM format. The MPC2104 uses four of Motorola’s 5 V 32K x 18; the MPC2105 uses four of the 5 V 64K x 18; the MPC2106 uses eight of the 5 V 64K x 18. For tag bits, a 5 V cache tag RAM configured as 16K x 12 for tag field plus 16K x 2 for valid and dirty status bits is used. Bursts can be initiated with the ADS signal. Subsequent burst addresses are generated internal to the Burst RAM by the CNTEN signal. Write cycles are internally self timed and are initiated by the rising edge of the clock (CLKx) inputs. Eight write enables are provided for byte write control. The MPC2107 utilizes asynchronous data RAMs. The module is configured as 32K x 64 in the same 182 pin DIMM format. Again, 5 V cache tag RAMs configured as 16K x 12 for tag field plus 16K x 2 for valid and dirty status bits are used. Burst capability is provided in that two burst addresses bypass the address latch. Presence detect pins are available for auto configuration of the cache con- trol. A serial EEPROM is optional to provide more in–depth description of the cache module. This EEPROM will be available on future revisions of the module family. The module family pinout will support 5 V and 3.3 V components for a clear path to lower voltage and power savings. Both power supplies must be connected. All of these cache modules are plug and pin compatible with each other. Power PC–style Burst Counter on Chip (MPC2104/5/6) Flow–Through Data I/O (MPC2104/5/6) Plug and Pin Compatibility of entire Module Family Multiple Clock Pins for Reduced Loading All Cache Data and Tag I/Os are LVTTL (3.3 V) Compatible (MPC2104/5/6) Three State Outputs Byte Write Capability Fast Module Clock Rates: Up to 66 MHz Fast SRAM Access Times: 10 ns for Tag RAM Match

9 ns for Data RAM (MPC2104/5/6) 15 ns for Data RAM (MPC2107)

Decoupling Capacitors for Each Fast Static RAM High Quality Multi–Layer FR4 PWB With Separate Power and Ground Planes 182 Pin Card Edge Module Burndy Connector, Part Number: ELF182JSC–3Z50

Burst RAM is a trademark of Motorola. Power PC is a trademark of International Business Machines Corp.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

MOTOROLA FAST SRAM  Motorola, Inc. 1995 MPC2104•MPC2105•MPC2106•MPC2107

Page Summary Contents For Motorola MPC2104 MPC2105 MPC2106 MPC2107 Specifications

Page 1 查询MPC2104供应商 Order this document SEMICONDUCTOR TECHNICAL DATA by MPC2104/D Advance Information MPC2104 256KB and 512KB Burst RAM MPC2105 Secondary Cache Modules for MPC2106 Power PC PRe P/CHRP Platf...
Page 2 VSS VSS PD1/IDSDATA PD0/IDSCLK PIN ASSIGNMENT PD3 PD2 DH31 DH30 182–LEAD DIMM DH29 DH28 TOP VIEW – CASE TBD DH27 DH26 DH25 DH24 VCC3 VCC3 CWE3 DP3 DH23 DH22 DH21 DH20 DH18 DH19 VSS VSS DH16 DH17 CWE2 ...
Page 3 MPC2104/MPC2105 BLOCK DIAGRAM A0A28 MCM67Mx18 CLK3 = NC A1A27 CLK0 CLK4 = NC DQ0 – DQ8 DH0 – DH7 + DP0 ALE = NC ADS1 = NC A13 A15 DQ9 – DQ17 DH8 – DH15 + DP1 CNTEN1 = NC ADS0 TSC LW CWE0 COE1 = NC BAA...
Page 4 MPC2106 BLOCK DIAGRAM 64K X 18 BURST ADS0 TSC DQ0 – DQ8 DH0 – DH7 + DP0 CNTEN0 BAA DQ9 – DQ17 DH8 – DH15 + DP1 LW CWE0 X24C00 UW CWE1 (OPTIONAL) PD0/IDSCLK PD1/IDSDATA STANDBY SCL 64K X 18 BURST SDA P...
Page 5 MPC2107 BLOCK DIAGRAM ADDR0 A0 MCM6206 ADDR1 A1 DQ0 – DQ7 DH0 – DH7 CWE0 X24C00 (OPTIONAL) PD0/IDSCLK PD1/IDSDATA ESTANDBY MCM6206 SDA DQ0 – DQ7 DH8 – DH15 CWE1 MCM6206 A0 A1 DQ0 – DQ7 DH16 – DH23 CWE...
Page 6 PIN DESCRIPTIONS Pin Locations Symbol Type Description 68, 69, 70, 71, 73, 74, 75, 76, A0 – A28 Input Address Inputs – (MSB:0, LSB:28) 78, 79, 80, 82, 83, 84, 85, 159, 160, 161, 162, 164, 165, 166, 16...
Page 7 DATA RAM MCM67M518, MCM67M618 SYNCHRONOUS TRUTH TABLE (See Notes 1, 2, and 3) STANDBY ADS0 CNTEN0 CWEx CLKx Address Used Operation L–H N/A Deselected L–H External Address Write Cycle, Begin Burst L–H ...
Page 8 DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 5%, TA = 0 to + 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS (Voltages referenced to VSS = 0 V) Parameter Symbol Min Max Un...
Page 9 DATA RAMs AC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 5% TA = 0 to + 70°C, Unless Otherwise Noted) Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . . Output Tim...
Page 10 SYNCHRONOUS DATA RAM READ CYCLE t KHKH CLK1, CLK0 t KHKLt KLKH t TSVKH t KHTSX t AVKH t KHAX A(12, 13, 14 – 26) A1 A2 (See Note 1) CWE0 – CWE7 t WVKH t KHWX t EVKH t KHEX STANDBY t BAVKH t KHBAX CNTEN...
Page 11 SYNCHRONOUS DATA RAM WRITE CYCLE t KHKH CLK1, CLK0 t KHKLt KLKH t SVKH t KHTSX t AVKH t KHAX t AVKH t KHAX t WVKH t KHWX CWE0 – CWE7 t EVKH t KHEX STANDBY t BAVKH t KHBAX CNTEN0 t DVKH t KHDX DATA IN ...
Page 12 AC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 5% TA = 0 to + 70°C, Unless Otherwise Noted) Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . . Output Timing Refere...
Page 13 ASYNCHRONOUS READ CYCLE 1 (See Note 7) t AVAV A (ADDRESS) t AXQX Q (DATA OUT) DATA VALIDPREVIOUS DATA VALID t AVQV ASYNCHRONOUS READ CYCLE 2 (See Note 3) t AVAV A (ADDRESS) t AVQV t ELQV E (CHIP ENABL...
Page 14 ASYNCHRONOUS DATA RAMs WRITE CYCLE 1 (See Notes 1 and 2) MPC2107–15 Parameter Symbol Min Max Unit Notes Write Cycle Time t AVAV ns Address Set–up Time t AVWL ns Address Valid to End of Write t AVWH ns...
Page 15 ASYNCHRONOUS DATA RAMs WRITE CYCLE 2 (E Controlled, See Notes 1 and 2) MPC2107–15 Parameter Symbol Min Max Unit Notes Write Cycle Time t AVAV ns Address Setup Time t AVEL ns Address Valid to End of Wr...
Page 16 TAG RAM RESET FUNCTION TRUTH TABLE (See Notes 1 and 2) TCLR CLK TWE TAG VLDout DTYout WTout MATCH TA Operation POWER L – H High–Z L(3) L(3) L(3) L(3) High–Z Reset Status Active L – H Not Allowed NOTES...
Page 17 TAG RAM AC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 5%, TA = 0 to + 70°C, Unless Otherwise Noted) Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . . Output Timi...
Page 18 TA IT (S ee ot 2) ST AT IT TA EA TA EA TA IT AF TE IT AF TE EA KH KL KL KH KH KH –2 6) VA LI VA LI VA LI (S ee ot 3) AV KH KH AX VK KH VK KH (S ee ot 1) LQ KH LQ (S ee ot 1) AV KH KH AX VA LI VA LI VA...
Page 19 TAG RAM MATCH CYCLE Tag RAM Parameter Symbol Min Max Unit Notes Clock High Write to MATCH Invalid t KHML ns Clock High Read to MATCH Valid t KHMV ns Address Valid to MATCH Valid t AVMV ns MATCH Valid ...
Page 20 VA LI ES VM XM A0 VA LI AT AT FR : P ES SO TA AM PR ES SO VK VK LM LM AT VA LI AT AL ID VA LI VA LI * C ac he dd re ss es se ar e: 4– fo r M PC nd PC ; 1 3– fo r M PC ; 1 2– fo r M PC MPC2104•MPC2105•...
Page 21 TAG RAM TCLR FUNCTION t STC t HTC t SRST t SHRS DIRTYOUT t WVKH t RHWX t RSMV MATCH VALID t RSQZ* t RSQX * Transition is measured plus or minus 200 m V from steady state. MOTOROLA FAST SRAM MPC2104•MP...
Page 22 ORDERING INFORMATION (Order by Full Part Number) MPC 210x XX XX Motorola Memory Prefix Speed (66 = 66 MHz, synchronous) (15 = 15 ns asynchronous) Part Number Package (SG = Gold Pad SIMM) Full Part Num...
Page 23 MOTOROLA FAST SRAM MPC2104•MPC2105•MPC2106•MPC2107
Page 24 How to reach us: USA EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsury...

Manual Details

Brand Motorola
Pages 24
File Size 234.47 KB
Published July 16, 2026
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Frequently Asked Questions

Are all cache modules in this family compatible?

Yes, all these cache modules are plug and pin compatible with each other.

What voltages should be used when connecting the power supplies?

Both V 5 and V 3 must be connected on all modules.

How is data burst handling managed internally?

Subsequent burst addresses are generated internal to the BurstRAM by the CNTEN signal.

What are the fastest access times advertised for the modules?

Fast SRAM accesses include 10 ns (Tag RAM Match), 9 ns (Data RAM, MPC2104/5/6), and up to 66 MHz clock rates.