Honeywell HX6656 Data Sheet

Military & Space Products

32K x 8 ROM—SOI HX6656

FEATURES

RADIATION OTHER

Fabricated with RICMOS™ IV Silicon on Insulator Read Cycle Times (SOI) 0.75 µm Process (L = 0.6 µm) < 17 ns (Typical)

≤ 25 ns (-55 to 125°C)

Total Dose Hardness through 1x106 rad(Si O

Typical Operating Power <15 m W/MHz

Dynamic and Static Transient Upset

Hardness through 1x109 rad(Si)/s Asynchronous Operation

Dose Rate Survivability through 1x1011 rad(Si)/s CMOS or TTL Compatible I/O

Neutron Hardness through 1x1014 cm-2 Single 5 V ± 10% Power Supply

SEU Immune Packaging Options 28-Lead Flat Pack (0.500 in. x 0.720 in.) Latchup Free 28-Lead DIP, MIL-STD-1835, CDIP2-T28 36-Lead Flat Pack (0.630 in. x 0.650 in.)

GENERAL DESCRIPTION

The 32K x 8 Radiation Hardened ROM is a high perform- ance 32,768 word x 8-bit read only memory with industry- standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The ROM operates over the full military temperature range and re- quires only a single 5 V ± 10% power supply. The ROM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 m W/MHz in operation, and less than 5 m W when de-selected. The ROM operation is fully asynchronous, with an associated typical access time of 14 ns.

Honeywell’s enhanced SOI RICMOS™ IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and pro- cess hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate length—L ). Additional features include

tungsten via plugs, Honeywell’s proprietary SHARP pla- narization process, and a lightly doped drain (LDD) struc- ture for improved short channel reliability.