Fairchild Si6466DQ Data Sheet
Summary
Discover the Si6466DQ, a high-performance N-Channel PowerTrench MOSFET engineered for demanding power management systems. This rugged component excels in applications such as battery protection, DC/DC conversion, and load switching due to its low on-resistance ($R_{DS(ON)}$) and extended $\pm 12$V gate drive range. The comprehensive manual provides industrial-grade schematics, detailed electrical characteristics, thermal analysis, and dynamic performance data necessary for power electronics designers. It is the essential component solution for robust, energy-efficient circuit development.
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Si6466D November 2001
Si6466DQ 20V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET is a rugged gate version of
• 7.8 A, 20 V RDS(ON) = 15 mΩ @ VGS = 4.5 V
Fairchild Semiconductor’s advanced Power Trench
RDS(ON) = 22 mΩ @ VGS = 2.5 V
process. It has been optimized for power management applications requiring a wide range of gate drive voltage
• Extended VGSS range (±12V) for battery applications
ratings (2.5V to 12V).
Applications • High performance trench technology for extremely low RDS(ON)
• Battery protection
• DC/DC conversion • Low profile TSSOP-8 package
• Power management • Load switch
TSSOP-8
Pin 1
Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current – Continuous (Note 1) 7.8 A – Pulsed 30 PD Power Dissipation (Note 1a) 1.4 W (Note 1b) 1.1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 87 °C/W (Note 1b) 114
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6466 Si6466DQ 13’’ 16mm 3000 units
2001 Fairchild Semiconductor Corporation Si6466DQ Rev C(W)
Page Summary Contents For Fairchild Si6466DQ Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 153.20 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the thermal resistance of the Si6466DQ when mounted on a 1in copper pad?
The thermal resistance (RθJA) for this mounting condition is 114 °C/W.
What are the recommended operating temperature ranges for this MOSFET?
The junction temperature range is from –55 to +150 °C.
What are the primary applications listed for this N-Channel PowerTrench MOSFET?
It is optimized for power management, DC/DC conversion, battery protection, and load switch applications.
How low can the on-resistance (RDS(ON)) be with high current draw?
The typical RDS(ON) measured at 7.8A is listed as 15 mΩ @ V = 4.5 V.