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Fairchild NDS9955 Data Sheet

Summary

Fairchild Semiconductor data sheet for NDS9955 N-Channel enhancement mode power MOSFETs using high-density DMOS technology. Available in SOT-23, SOT-223, SOIC-16, SuperSOT-6, and SuperSOT-8 packages. Covers 50V rating, thermal characteristics, electrical specs, and single/dual configurations. Applications include disk drive motors and battery-powered circuits. For power electronics designers using compact surface mount components.

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Page 1 Text Content

查询NDS9955供应商

May 1998

NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V, transistors are produced using Fairchild's proprietary, high

RDS(ON) = 0.200 Ω @ VGS = 4.5 V.

cell density, DMOS technology. This very high density process is especially tailored to provide superior switching High density cell design for extremely low RDS(ON). performance and minimize on-state resistance. These

High power and current handling capability in a widely

devices are particularly suited for low voltage applications

used surface mount package.

such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance

Dual MOSFET in surface mount package.

to transients are needed.

SOT-23 Super SOTTM-8 SOT-223Super SOTTM-6 SOIC-16SO-8

D1 NDS

G2 S2 G1SO-8

Absolute Maximum Ratings TA = 25o C unless other wise noted Symbol Parameter NDS9955 Units

VDSS Drain-Source Voltage

VGSS Gate-Source Voltage ±20

ID Drain Current - Continuous (Note 1a)

- Pulsed

PD Power Dissipation for Dual Operation 2

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) (Note 1c) 0.9 TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

© 1998 Fairchild Semiconductor Corporation NDS9955 Rev.A

Page Summary Contents For Fairchild NDS9955 Data Sheet

Page 1 查询NDS9955供应商 May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ V...
Page 2 Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA ∆BVDSS/∆T...
Page 3 (O LI IN IN -S Typical Electrical Characteristics IN -S -R IS V = 10VGS 6.0V V = 3.0VGS V , DRAIN-SOURCE VOLTAGE (V) I , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance ...
Page 4 Typical Electrical Characteristics (continued) IN (O LI r( t) , N LI IV IN -S -R IS IE IS I = 3AD 1.8 V = 10VGS C iss 1.4 C oss C rss f = 1 MHz 0.6 V = 0 VGS V , DRAIN TO SOURCE VOLTAGE (V) T , JUNCTI...
Page 5 SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1.0 Packaging Description: ELECTROSTATIC SOIC-8 parts are shipped in tape. The carrier tape is DO NO SHI SEN P...
Page 6 SO-8 Tape and Reel Data and Package Dimensions, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 K0 E2 Wc B0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 D0 D...
Page 7 SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1) Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774...
Page 8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ISOP...

Manual Details

Brand Fairchild
Pages 8
File Size 190.38 KB
Published June 17, 2026
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Frequently Asked Questions

What are the key applications for the NDS9955?

Low voltage applications like disk drive motor control and battery powered circuits requiring fast switching and low power loss.

What is the maximum continuous drain current?

The maximum continuous drain current is 10 A, with a pulsed drain current of up to 27 A.

What is the package type for the NDS9955?

It is available in an SO-8 surface mount package.

What is the maximum operating temperature?

The maximum operating and storage temperature range is -55°C to 150°C.

What is the typical on-state resistance at Vgs=4.5V?

The typical on-state drain-source resistance (R_DS(ON)) is 0.076 ohms when V_GS=10V and I_D=3A at 25°C.