Fairchild NDS9955 Data Sheet
Summary
Fairchild Semiconductor data sheet for NDS9955 N-Channel enhancement mode power MOSFETs using high-density DMOS technology. Available in SOT-23, SOT-223, SOIC-16, SuperSOT-6, and SuperSOT-8 packages. Covers 50V rating, thermal characteristics, electrical specs, and single/dual configurations. Applications include disk drive motors and battery-powered circuits. For power electronics designers using compact surface mount components.
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查询NDS9955供应商
May 1998
NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V, transistors are produced using Fairchild's proprietary, high
RDS(ON) = 0.200 Ω @ VGS = 4.5 V.
cell density, DMOS technology. This very high density process is especially tailored to provide superior switching High density cell design for extremely low RDS(ON). performance and minimize on-state resistance. These
High power and current handling capability in a widely
devices are particularly suited for low voltage applications
used surface mount package.
such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance
Dual MOSFET in surface mount package.
to transients are needed.
SOT-23 Super SOTTM-8 SOT-223Super SOTTM-6 SOIC-16SO-8
D1 NDS
G2 S2 G1SO-8
Absolute Maximum Ratings TA = 25o C unless other wise noted Symbol Parameter NDS9955 Units
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage ±20
ID Drain Current - Continuous (Note 1a)
- Pulsed
PD Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) (Note 1c) 0.9 TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W
© 1998 Fairchild Semiconductor Corporation NDS9955 Rev.A
Page Summary Contents For Fairchild NDS9955 Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 190.38 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What are the key applications for the NDS9955?
Low voltage applications like disk drive motor control and battery powered circuits requiring fast switching and low power loss.
What is the maximum continuous drain current?
The maximum continuous drain current is 10 A, with a pulsed drain current of up to 27 A.
What is the package type for the NDS9955?
It is available in an SO-8 surface mount package.
What is the maximum operating temperature?
The maximum operating and storage temperature range is -55°C to 150°C.
What is the typical on-state resistance at Vgs=4.5V?
The typical on-state drain-source resistance (R_DS(ON)) is 0.076 ohms when V_GS=10V and I_D=3A at 25°C.