Fairchild KSD882 Data Sheet
Summary
The KSD882 is a reliable NPN Epitaxial Silicon Transistor designed for low-speed switching and audio frequency power amplification applications. This comprehensive datasheet provides circuit designers and electronics engineers with full technical resources, including absolute maximum ratings, detailed electrical specifications (like current gain bandwidth product), saturation voltages, and critical thermal derating curves necessary for robust design. Use this manual to ensure optimal performance when incorporating high-efficiency switching components into commercial circuits.
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KSD882
Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units
VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage Emitter- Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current 0.6
Collector Dissipation (TC=25°C)
PC Collector Dissipation (Ta=25°C) TJ Junction Temperature °C TSTG Storage Temperature - 55 ~ 150 °C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 30V, IE = 0 µA
IEBO Emitter Cut-off Current VEB = 3V, IC = 0 µA h FE1 *DC Current Gain VCE = 2V, IC = 20m A
h FE2 VCE = 2V, IC = 1A
VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.3 0.5 VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 1.0 2.0 f T Current Gain Bandwidth Product VCE = 5V, IE = 0.1A MHz Cob Output Capacitance VCB = 10V, IE = 0 p F
f = 1MHz
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h FE Classificntion Classification
h FE2 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page Summary Contents For Fairchild KSD882 Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 47.49 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What model of transistor is covered by this manual?
The document describes the KSD882 NPN Epitaxial Silicon Transistor.
What is the Collector-Emitter Voltage (CEO) rating?
The absolute maximum rating for CEO is 30 V.
How is power dissipation affected by ambient temperature?
The derating curve shows that typical power dissipation decreases as case temperature increases, meaning it must be limited to maintain safe operation.
What are the common limitations concerning usage?
The product has limits for Pulse Width (PW≤10ms) and Duty Cycle(≤50%) under certain operating conditions.