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FAIRCHILD HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet

Summary

This comprehensive datasheet details the performance specifications for HUFA75337 N-Channel Power MOSFETs, engineered for demanding power switching environments, especially within the automotive industry. The document covers electrical characteristics, thermal management, and switching parameters for reliable high-efficiency operation. It is essential reading for electronics designers developing advanced power supplies, motor controllers, or robust energy management systems that require outstanding reliability under extreme conditions.

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查询HUFA75337G3供应商

HUFA75337G3, HUFA75337P3, HUFA75337S3S

Data Sheet December 2001

75A, 55V, 0.014 Ohm, N-Channel Ultra FET Features Power MOSFETs

These N-Channel power MOSFETs

Simulation Models

are manufactured using the

Temperature Compensated PSPICE® and SABER™

innovative Ultra FET® process. This

Models

advanced process technology

SPICE and SABER Thermal Impedance Models

achieves the lowest possible on-resistance per silicon area,

Available on the web at: www.fairchildsemi.com

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the Peak Current vs Pulse Width Curve

diode exhibits very low reverse recovery time and stored

UIS Rating Curve

charge. It was designed for use in applications where power

Related Literature

efficiency is important, such as switching regulators,

TB334, “Guidelines for Soldering Surface Mount

switching converters, motor drivers, relay drivers, low-

Components to PC Boards”

voltage bus switches, and power management in portable and battery-operated products.

Symbol

Formerly developmental type TA75337.

Ordering Information PART NUMBER PACKAGE BRAND HUFA75337G3 TO-247 75337G HUFA75337P3 TO-220AB 75337P HUFA75337S3S TO-263AB 75337S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75337S3ST.

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE SOURCE

DRAIN

DRAIN

DRAIN (FLANGE)

DRAIN (TAB)

JEDEC TO-263AB

DRAIN

(FLANGE)

SOURCE

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation HUFA75337G3, HUFA75337P3, HUFA75337S3S Rev. B

Page Summary Contents For FAIRCHILD HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet

Page 1 查询HUFA75337G3供应商 HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel Ultra FET Features Power MOSFETs These N-Channel power MOSFETs Simulation Models are man...
Page 2 HUFA75337G3, HUFA75337P3, HUFA75337S3S Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 3 HUFA75337G3, HUFA75337P3, HUFA75337S3S θJ , N IZ IS IP IO LT IP IE Electrical Specifications TC = 25o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS CAPACITANCE SPECI...
Page 4 HUFA75337G3, HUFA75337P3, HUFA75337S3S , D IN , D IN , P Typical Performance Curves (Continued) TC = 25o C FOR TEMPERATURES ABOVE 25o C DERATE PEAK CURRENT AS FOLLOWS: 175 - TC VGS = 10V TRANSCONDUCTA...
Page 5 HUFA75337G3, HUFA75337P3, HUFA75337S3S IZ IN IZ IN LT IS TA Typical Performance Curves (Continued) 2.5 1.2 PULSE DURATION = 80µs VGS = VDS, ID = 250µA DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 75A 1.0 , G...
Page 6 HUFA75337G3, HUFA75337P3, HUFA75337S3S Test Circuits and Waveforms BVDSS VARY t P TO OBTAIN IAS REQUIRED PEAK IAS RG 0V IAS 0.01Ω FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY W...
Page 7 HUFA75337G3, HUFA75337P3, HUFA75337S3S PSPICE Electrical Model .SUBCKT HUFA75337 2 1 3 ; rev August 1997 CA 12 8 2.4e-9 CB 15 14 2.4e-9 LDRAIN CIN 6 8 1.63e-9 DPLCAP DRAIN RLDRAIN DBODY 7 5 DBODYMOD R...
Page 8 HUFA75337G3, HUFA75337P3, HUFA75337S3S SABER Electrical Model REV August 1997 template HUFA75337 n2, n1, n3 electrical n2, n1, n3 var i iscl d..model dbodymod = (is = 1.8e-12, xti = 4.5, cjo = 2.6e-9,...
Page 9 HUFA75337G3, HUFA75337P3, HUFA75337S3S SPICE Thermal Model th JUNCTION REV February 1999 HUFA75337 CTHERM1 th 6 8.0e-7 CTHERM2 6 5 1.6e-6 RTHERM1 CTHERM1 CTHERM3 5 4 4.8e-3 CTHERM4 4 3 7.6e-3 CTHERM5 ...
Page 10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST...