FAIRCHILD HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet
Summary
This comprehensive datasheet details the performance specifications for HUFA75337 N-Channel Power MOSFETs, engineered for demanding power switching environments, especially within the automotive industry. The document covers electrical characteristics, thermal management, and switching parameters for reliable high-efficiency operation. It is essential reading for electronics designers developing advanced power supplies, motor controllers, or robust energy management systems that require outstanding reliability under extreme conditions.
Page 1 Text Content
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HUFA75337G3, HUFA75337P3, HUFA75337S3S
Data Sheet December 2001
75A, 55V, 0.014 Ohm, N-Channel Ultra FET Features Power MOSFETs
These N-Channel power MOSFETs
Simulation Models
are manufactured using the
Temperature Compensated PSPICE® and SABER™
innovative Ultra FET® process. This
Models
advanced process technology
SPICE and SABER Thermal Impedance Models
achieves the lowest possible on-resistance per silicon area,
Available on the web at: www.fairchildsemi.com
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the Peak Current vs Pulse Width Curve
diode exhibits very low reverse recovery time and stored
UIS Rating Curve
charge. It was designed for use in applications where power
Related Literature
efficiency is important, such as switching regulators,
TB334, “Guidelines for Soldering Surface Mount
switching converters, motor drivers, relay drivers, low-
Components to PC Boards”
voltage bus switches, and power management in portable and battery-operated products.
Symbol
Formerly developmental type TA75337.
Ordering Information PART NUMBER PACKAGE BRAND HUFA75337G3 TO-247 75337G HUFA75337P3 TO-220AB 75337P HUFA75337S3S TO-263AB 75337S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75337S3ST.
Packaging
JEDEC STYLE TO-247 JEDEC TO-220AB
SOURCE SOURCE
DRAIN
DRAIN
DRAIN (FLANGE)
DRAIN (TAB)
JEDEC TO-263AB
DRAIN
(FLANGE)
SOURCE
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA75337G3, HUFA75337P3, HUFA75337S3S Rev. B
Page Summary Contents For FAIRCHILD HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 222.63 KB |
| Published | July 15, 2026 |
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