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Fairchild FJP13007 Data Sheet

Summary

This NPN Silicon Transistor is designed for high-speed switching and high voltage applications, making it ideal for robust motor control systems and sensitive switching regulators. The comprehensive manual provides all necessary details, including absolute maximum ratings, detailed electrical characteristics (such as current gain and saturation voltages), safe operating areas, and package dimensions. Use this resource to ensure optimal performance and reliable circuit design in demanding power electronics applications.

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查询FJP13007供应商

FJP13007

FJP13007

High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control

TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units

VCBO Collector-Base Voltage 700 VCEO Collector-Emitter Voltage 400

VEBO Emitter- Base Voltage

IC Collector Current (DC) Collector Current (Pulse)

Base Current

PC Collector Dissipation (TC=25°C) TJ Junction Temperature °C TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units

BVCEO Collector- Emitter Breakdown Voltage IC = 10m A, IB = 0

IEBO Emitter Cut-off Current VEB = 9V, IC = 0 m A

h FE1 *DC Current Gain VCE = 5V, IC = 2A

h FE2 VCE = 5V, IC = 5A

VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A

IC = 5A, IB = 1A IC = 8A, IB = 2A

VBE (sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A 1.2

IC = 5A, IB = 1A 1.6

Cob Output Capacitance VCB = 10V, f = 0.1MHz p F f T Current Gain Bandwidth Product VCE = 10V, IC = 0.5A MHz t ON Turn On Time VCC = 125V, IC = 5A 1.6 µs

IB1 = -IB2 = 1A

t STG Storage Time µs

RL = 50Ω

t F Fall Time 0.7 µs

* Pulse test: PW≤300µs, Duty cycle≤2%

h FE Classification

Classification R(H1) O(H2)

h FE1 15 ~ 28 26 ~ 39

©2004 Fairchild Semiconductor Corporation Rev. B, July 2004

Page Summary Contents For Fairchild FJP13007 Data Sheet

Page 1 查询FJP13007供应商 FJP13007 FJP13007 High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor ...
Page 2 FJP13007 Typical Characteristics , t ns TU FF IM [p F] , O TP AP AC IT AN ST F [ ob , D AI IC = 3 IB VCE = 5V VBE(sat) VCE(sat) IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current G...
Page 3 FJP13007 Typical Characteristics (Continued) [A LL EC TO EN Vcc=50V, IB1=1A, IB2 = -1A L = 1m H VCE[V], COLLECTOR-EMITTER VOLTAGE TC[o C], CASE TEMPERATURE Figure 7. Reverse Biased Safe Ooperating Are...
Page 4 FJP13007 Package Dimensions TO-92 3. 1. 0. +0 .1 1.27TYP 1.27TYP 0.38 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B, July 2004
Page 5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST...

Manual Details

Brand Fairchild
Pages 5
File Size 48.95 KB
Published June 22, 2026
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Frequently Asked Questions

What are the absolute maximum ratings for this transistor?

The Collector-Emitter Voltage (CEO) maximum rating is 400 V, and the Collector Current (DC) limit is 8 A.

Is the FJP13007 suitable for regulating high voltage circuits?

Yes, it is designed as a High Voltage Switch Mode application, suitable for Switching Regulators and Motor Control.

How do I determine if this datasheet uses final specifications?

For full production specifications (final data), look for the 'Full Production' status definition in the document.

What is the typical power dissipation capacity of the device?

The specified Collector Dissipation at T=25°C is 80 W, and power derating curves are provided.