# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

SAMSUNG K6T1008C2E Family CMOS SRAM User's Manual Specification Guide

Summary

The K6T1008C2E family is a low-power, advanced CMOS Static RAM (SRAM) designed for reliable memory storage. This comprehensive datasheet provides system designers with all necessary technical specifications for integration, including detailed functional diagrams, absolute maximum ratings, and recommended operating conditions. It features versatile options spanning multiple packages (DIP, SOP, etc.), configurable speeds (e.g., 55ns/70ns), and wide temperature ranges, supporting both commercial (0~70°C) and industrial (-40~85°C) applications.

📄 Preview PAGE OF 10

Page 1 Text Content

CMOS SRAMK6T1008C2E Family

Document Title 128Kx8 bit Low Power CMOS Static RAM

Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary

1.0 Finalize August 30, 1999 Final

- Improve t WP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.

1.01 Errata correction December 1, 1999

2.0 Revise February 14, 2000 Final

3.0 Revise March 3, 2000 Final

- Add 55ns parts to industrial products.

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.

Revision 3.0 March 2000

Page Summary Contents For SAMSUNG K6T1008C2E Family CMOS SRAM User's Manual Specification Guide

Page 1 CMOS SRAMK6T1008C2E Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize Augus...
Page 2 CMOS SRAMK6T1008C2E Family 128Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: TFT The K6T1008C2E families are fabricated by SAMSUNG′s • Organization: 128Kx8 advanc...
Page 3 CMOS SRAMK6T1008C2E Family PRODUCT LIST Commercial Temperature Products(0~70°C) Industrial Temperature Products(-40~85°C) Part Name Function Part Name Function K6T1008C2E-DL55 32-DIP, 55ns, Low Power ...
Page 4 CMOS SRAMK6T1008C2E Family RECOMMENDED DC OPERATING CONDITIONS1) Item Symbol Product Min Typ Max Unit Supply voltage Vcc K6T1008C2E Family 4.5 5.0 5.5 Ground Vss All Family Input high voltage VIH K6T1...
Page 5 CMOS SRAMK6T1008C2E Family AC OPERATING CONDITIONS TEST CONDITIONS( Test Load and Input/Output Reference) Input pulse level: 0.8 to 2.4V Input rising and falling time: 5ns CL1) Input and output refere...
Page 6 CMOS SRAMK6T1008C2E Family TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH) Address Data Out Previous Data Valid Data Valid TIMING WAVEFORM OF READ CYCLE(...
Page 7 CMOS SRAMK6T1008C2E Family TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled) Address t CW(2) t WR(4) t CW(2) t WP(1) t AS(3) t DW t DH Data in Data Valid t WHZ Data out Data Undefined TIMING WAVEFORM ...
Page 8 CMOS SRAMK6T1008C2E Family TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 Controlled) Address t AS(3) t CW(2) t WR(4) t CW(2) t WP(1) t DW t DH Data in Data Valid Data out High-Z High-Z NOTES (WRITE CYCLE) 1....
Page 9 CMOS SRAMK6T1008C2E Family PACKAGE DIMENSIONS Units: millimeters(inches) 32 DUAL INLINE PACKAGE (600mil) MAX42.31 5.08 MAX 41.91±0.20 0.200 2.54 MIN0.015 32 PLASTIC SMALL OUTLINE PACKAGE (525mil) 5. ....
Page 10 CMOS SRAMK6T1008C2E Family PACKAGE DIMENSIONS Units: millimeters(inches) 32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0820F) MAX8.40 0.331 MIN0.05 MAX1.20 0.25 18.40±0.10 0.047 TYP 0.010 0.724±0.004 32 T...

Manual Details

Brand Samsung
Pages 10
File Size 132.49 KB
Published June 17, 2026
4 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What operating temperatures are available for the K6T1008C2E family?

The product offers commercial (0-70 °C) and industrial (-40 to 85 °C) operating temperature ranges.

What is the power supply voltage (Vcc) range?

The required Vcc range for operation is 4.5~5.5V.

How can low data retention be achieved using this SRAM?

Low data retention is supported down to a minimum voltage of 2V(Min), allowing use with battery back-up applications.

Which package options are available?

The device comes in various packages, including 32-DIP-600, 32-SOP-525, and 32-TSOP1-0820F/R.