Samsung DDR2 Unbuffered SODIMM User's Manual

Summary

Explore detailed technical specifications for high-performance DDR2 Unbuffered SODIMM memory modules (256MB, 512MB, and 1GB). This comprehensive guide provides engineers and hardware professionals with critical information regarding electrical performance standards, pin configurations, operational speeds (DDR2-800 to DDR2-400), physical dimensions, and compatibility details. It is essential for designing or servicing reliable embedded systems requiring precise and robust memory component sourcing and integration.

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256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die

64bit Non-ECC

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.2 Aug. 2005

Page Summary Contents For Samsung DDR2 Unbuffered SODIMM User's Manual

Page 1 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODU...

Page 2 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information Part Number Density Organization Component Composition Number of Rank Height M470T3354CZ3-C(L)E7/E6/D5/CC 25...

Page 3 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Pin Configurations (Front side/Back side) Pin Pin Pin Pin Pin Pin Pin Pin VREF VSS DQS2 DM2 A1 A0 DQ42 DQ46 VSS DQ4 VSS VSS VDD VDD DQ43 DQ47 DQ0 DQ5 DQ...

Page 4 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Input/Output Functional Description Symbol Type Function The system clock inputs. All address and command lines are sampled on the cross point of the ri...

Page 5 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Functional Block Diagram: 512MB, 64Mx64 Module(Populated as 2 rank of x16 DDR2 SDRAMs) M470T6554CZ3/M470T6554CZ0 ODT1 ODT0 CKE1 CKE0 S1 S0 DQS0 LDQS CS ...

Page 6 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Functional Block Diagram: 256MB, 32Mx64 Module(Populated as 1 rank of x16 DDR2 SDRAMs) M470T3354CZ3/M470T3354CZ0 CKE0 ODT0 S0 DQS0 LDQS CS DQS4 LDQS CS ...

Page 7 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Functional Block Diagram: 1GB, 128Mx64 Module(Populated as 2 ranks of x8 DDR2 SDRAMs) M470T2953CZ3/M470T2953CZ0 CKE1 ODT1 S1 CKE0 ODT0 S0 DQS0 DQS CS0 D...

Page 8 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Absolute Maximum DC Ratings Symbol Parameter Rating Units Notes VDD Voltage on VDD pin relative to VSS - 1.0 V ~ 2.3 V V 1 VDDQ Voltage on VDDQ pin rela...

Page 9 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Operating Temperature Condition Symbol Parameter Rating Units Notes TOPER Operating Temperature 0 to 95 °C 1, 2, 3 1. Operating Temperature is the case ...

Page 10 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM IDD Specification Parameters Definition (IDD values are for full operating range of Voltage and Temperature) Symbol Proposed Conditions Units Notes Oper...

Page 11 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Operating Current Table(1-1) (TA=0o C, VDD= 1.9V) M470T6554CZ3/M470T6554CZ0 : 64Mx64 512MB Module 800@CL=5 667@CL=5 533@CL=4 400@CL=3 Symbol Unit Notes ...

Page 12 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Operating Current Table(1-2) (TA=0o C, VDD= 1.9V) M470T2953CZ3/M470T2953CZ0 : 128Mx64 1GB Module 800@CL=5 667@CL=5 533@CL=4 400@CL=3 Symbol Unit Notes C...

Page 13 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Electrical Characteristics & AC Timing for DDR2-800/667/533/400 (0 °C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V) Refresh Paramete...

Page 14 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2-800 DDR2-667 DDR2-533 DDR2-400 Parameter Symbol Units Notes min max min max min max min max DQS input low pulse width t DQSL 0.35 0.35 0.35 0.35 t ...

Page 15 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Physical Dimensions: 32Mbx16 based 64Mx64 Module(2 Rank) M470T6554CZ3/M470T6554CZ0 67.60 ± 0.15 mm 3.8 mm Max 0.20 ± 0.15 min 2.00 1.1 mm 11.40 ± 0.15 m...

Page 16 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Physical Dimensions: 32Mbx16 based 32Mx64 Module(1 Rank) M470T3354CZ3/M470T3354CZ0 6. .1 67.60 ± 0.15 mm min 2.00 2.45 mm 11.40 ± 0.15 mm 47.40 ± 0.15 m...

Page 17 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Physical Dimensions: 64Mbx8 based 128Mx64 Module(2 Ranks) M470T2953CZ3/M470T2953CZ0 6. .1 67.60 ± 0.15 mm 3.8 mm max 0.20 ± 0.15 min 2.00 11.40 ± 0.15 m...

Page 18 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM Revision History Revision 1.0 (Mar. 2005) - Initial Release Revision 1.1 (Mar. 2005) - Changed IDD0/IDD3N/IDD3P current values. - Added Lowpower current...

Manual Details

Brand	Samsung
Pages	18
File Size	328.84 KB
Published	June 17, 2026

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Frequently Asked Questions

What is the required operating voltage for this memory?

The power supply must be 1.8V ± 0.1V.

What customization options are available for timing?

CAS Latency and Additive Latency can be programmed, as can Sequential/Interleave Burst Mode.

What storage capacities are offered in unbuffered SODIMM format?

Modules are available in 256MB, 512MB, and 1GB sizes.