ROHM SH8K12 Data Sheet/Manual

Summary

A high-performance N-channel MOSFET designed for efficient switching in compact, low-voltage applications. This SOP8 component features impressive low on-resistance and integrated body diodes. The manual provides extensive technical specifications needed by power electronics engineers, covering detailed electrical characteristics, switching performance metrics, dynamic thermal analysis, and absolute maximum ratings to ensure reliable integration into miniature circuit designs.

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Data Sheet

4V Drive Nch + Nch MOSFET SH8K12 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET SOP8

Features

1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB Basic ordering unit (pieces) SH8K12

(1) Tr1 Source ∗2 ∗2

(2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate ∗1 ∗1 Absolute maximum ratings (Ta = 25C) (5) Tr2 Drain (6) Tr2 Drain (1) (2) (3) (4)

Parameter Symbol Limits Unit (7) Tr1 Drain

∗1 ESD PROTECTION DIODE

(8) Tr1 Drain

Drain-source voltage VDSS ∗2 BODY DIODE

Gate-source voltage VGSS 20 Continuous ID 5.0

Drain current

Pulsed IDP *1 20

Source current Continuous Is 1.6 (Body Diode) Pulsed Isp *1 *2 2.0 W / TOTAL

Power dissipation PD

1.4 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

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Page Summary Contents For ROHM SH8K12 Data Sheet/Manual

Page 1 Data Sheet 4V Drive Nch + Nch MOSFET SH8K12 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Pa...

Page 2 Data Sheet SH8K12 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=...

Page 3 Data Sheet SH8K12 IC IN -S -S Electrical characteristic curves (Ta=25C) IS IN [A IN [A Fig.2 Typical Output Characteristics(Ⅱ) Fig.1 Typical Output Characteristics(Ⅰ) Ta=25°C Pulsed VGS= 10V VGS= 2....

Page 4 Data Sheet SH8K12 IC IN -S -S IT IN IM Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Resistance vs. Drain Current(Ⅳ) vs. Drain Current VGS= 4.0V VDS= 10V Pulsed Pulsed Ta=125°C ...

Page 5 Data Sheet SH8K12 IZ IE IS t) IT Fig.13 Typical Capacitance Fig.14 Maximum Safe Operating Aera vs. Drain-Source Voltage Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us PW=1ms PW = 10ms...

Page 6 Data Sheet SH8K12 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.07 MB
Published	June 18, 2026

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Frequently Asked Questions

What precaution should be taken in highly electrified environments?

Users must consider designing an ESD protection circuit.

Where must the MOSFET device ('SH8K12') be mounted for proper operation?

The device must be mounted on a ceramic board.

What is the typical static drain-source on-state resistance (Rds(on))?

At 5.0A and V=4.5V, the typical Rds(on) is 56 mΩ.

What are the valid operating temperature limits for the device?

The channel temperature (Tch) must not exceed 150°C.