ROHM RPI-579N1 Data Sheet

External dimensions (Unit : mm) RPI-579N1 ut pu

ph ot o- In pu t ( LE

ho to In fr ar ed ra ns fe ut pu In pu

tr an si st or

tr an si st or lig ht ch ar ac te ris tic ch ar ac ch ar ac

em itt er te ris tic te ris tic

Photointerrupter, General type di od

LA IV LL Ic LA IV LL Ic

Absolute maximum ratings (Ta=25°C)

Through hole

Parameter Symbol Limits Unit Applications

Forward current IF m A

Reverse voltage Printers

Facsimiles 4-φ0.8 −0

Power dissipation PD m W

AV equipment 8.95

Collector-emitter voltage VCEO 13.8 Emitter-collector voltage VECO 4.5 Gap

Features

0.8 Collector current IC m A 0.5

Collector power dissipation PC m W 1) Heat resistance (170°C). 2) Small gap (0.5mm) and good accuracy.

Operating temperature Topr −25 to +85 °C

3) Quick response time. Optical

Storage temperature Tstg −40 to +85 °C

4) Filter against visible ray is built-in. center

Soldering temperture IS IP IO Tsol 260 / 3 °C / s

LL IS IP IO (m 5) Kinked forming.

∗ 1mm from the body bottom.

Electrical and optical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions

Forward voltage VF 1.3 1.6 IF=50m A

Reverse current IR µA VR=10V

Dark current ICEO 0.5 µA VCE=10V Peak sensitivity wavelength λP nm

Notes:

Collector current IC 0.5 m A VCE=5V, IF=20m A

1. Unspecified tolerance

14(Bottom)

Collector-emitter saturation voltage VCE(sat) 0.1 0.5 IF=20m A, IC=0.1m A shall be ±0.2 .

2. Measurement in the bracket is

Rise time tr µs Cathode Collector

Response time VCC=5V, IF=20m A, RL=100Ω that of lead pin at base the mold.

Fall time tf µs

3. Dimension in parenthesis are Cut-off frequency f C MHz show for reference.

IF=50m A

4. Please be carefully not to receive

∗ Non-coherent Infrared light emitting diode used.Peak light emitting wavelength

λP nm

external disturbing light because

LA IV LL Ic IF

VCC=5V, IC=1m A, RL=100Ωtr tf Response time the top and back face emitter and µs Emitter Anode ∗ This product is not designed to be protected against electromagnetic wave.

2-φ0.7±0.1 detector element isn't covered by case.

λP nm −Maximum sensitivity wavelength

Electrical and optical characteristics curves

tr tf

RL=5kΩ VCE=30V

VCE=20V

tr tf VCE=10V RL=2kΩ

tf tr

RL=1kΩ

DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (m A) COLLECTOR CURRENT : Ic (µA) AMBIENT TEMPERATURE : Ta (°C)

Fig.8 Response time vs. Fig.9 Dark current vs. ambient

Fig.1 Relative output vs. distance ( ) LL Fig.2 Forward current falloff Ic Fig.3 Forward current vs. forward voltage Fig.7 Collector current vs. forward current collector current temperature

LL IC

VCCInput

IF=25m A

PCPD 2.0

Input

20m A Output

90%RL

Output

10m A td

tr tf

td : Delay time r : Rise time (time for output current to rise from 10% to 90% of peak current) f : Fall time (time for output current to fall

COLLECTOR-EMITTER VOLTAGE : VCE (V)

DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C) from 90% to 10% of peak current)

Fig.5 Power dissipation / collector power

Fig.6 Relative output vs. ambient

Fig.4 Relative output vs. distance ( ) dissipation vs. ambient temperature temperature Fig.10 Output characteristics Fig.11 Response time measurement circuit IM t ( µs 2.

ID (n