ROHM RPI-579 Data Sheet

External dimensions (Unit : mm) RPI-579 ut pu

ph ot o- In pu t ( LE

ho to In fr ar ed ra ns fe ut pu In pu

tr an si st or

tr an si st or lig ht ch ar ac te ris tic ch ar ac ch ar ac

em itt er te ris tic te ris tic

Photointerrupter, General type di od 13.8

LA IV LL Ic LA IV LL Ic

Through hole 2.35

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit Applications

Forward current IF m A 4-φ1.0

Reverse voltage Printers

VR 8.95

Facsimiles

Power dissipation PD m W

AV equipment

Collector-emitter voltage VCEO

Emitter-collector voltage 0.8

VECO 4.5

Features 0.5

Collector current IC m A

Collector power dissipation PC m W 1) Heat resistance (170°C). 2) Small gap (0.5mm) and good accuracy.

Operating temperature Topr −25 to +85 °C Optical center

3) Quick response time.

Storage temperature Tstg −40 to +85 °C

4) Filter against visible ray is built-in.

Soldering temperture IS IP IO

Tsol 260 / 3 °C / s LL IS IP IO (m

∗ 1mm from the body bottom.

Electrical and optical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions

Forward voltage VF 1.3 1.6 IF=50m A 4−0.4 2-0.45

Reverse current IR µA VR=10V

Dark current ICEO 0.5 µA VCE=10V

Cathode Collector

Peak sensitivity wavelength λP nm

14(Bottom)

Collector current IC 0.5 m A VCE=5V, IF=20m A

Collector-emitter saturation voltage VCE(sat) 0.1 0.5 IF=20m A, IC=0.1m A

Notes:

Rise time tr µs 1. Unspecified tolerance

Response time VCC=5V, IF=20m A, RL=100Ω

shall be ±0.2 .

Fall time tf µs

Anode Emitter 2. Measurement in the bracket is

Cut-off frequency f C MHz

IF=50m A that of lead pin at base the mold.

∗ Non-coherent Infrared light emitting diode used.Peak light emitting wavelength 3. Dimension in parenthesis are λP nm

show for reference.

LA IV LL Ic IF VCC=5V, IC=1m A, RL=100Ωtr tf Response time 2-φ0.7±0.1

µs 2.35±0.1 6.6±0.1 4. Please be carefully not to receive

∗ This product is not designed to be protected against electromagnetic wave.

external disturbing light because λP nm −Maximum sensitivity wavelength the top and back face emitter and detector element isn't covered by case.

Electrical and optical characteristics curves

tr tf

RL=5kΩ VCE=30V

VCE=20V

tr tf VCE=10V RL=2kΩ

tf tr

RL=1kΩ

DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (m A) COLLECTOR CURRENT : Ic (µA) AMBIENT TEMPERATURE : Ta (°C)

Fig.8 Response time vs. Fig.9 Dark current vs. ambient

Fig.1 Relative output vs. distance ( ) LL Fig.2 Forward current falloff Ic Fig.3 Forward current vs. forward voltage Fig.7 Collector current vs. forward current collector current temperature

LL IC

VCCInput

IF=25m A PCPD 2.0 6.

Input

20m A Output

90%RL

Output

10m A td

tr tf

td : Delay time r : Rise time (time for output current to rise from 10% to 90% of peak current) f : Fall time (time for output current to fall

COLLECTOR-EMITTER VOLTAGE : VCE (V)

DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C) from 90% to 10% of peak current)

Fig.5 Power dissipation / collector power

Fig.6 Relative output vs. ambient

Fig.4 Relative output vs. distance ( ) dissipation vs. ambient temperature temperature Fig.10 Output characteristics Fig.11 Response time measurement circuit IM t ( µs

ID (n