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ROHM EM6K6 Data Sheet Manual

Summary

The EM6K6 is a high-performance N-channel MOSFET transistor engineered for reliable switching applications in portable electronic equipment. Featuring low on-resistance and optimized 1.8V drive capability, this device facilitates miniaturization while maintaining efficiency. This technical summary detailing the EM6K6 provides engineers with comprehensive specifications, including absolute maximum ratings, detailed electrical characteristics, and crucial dynamic performance curves (switching time) needed for precise circuit design.

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EM6K6

Transistor

1.8V Drive Nch+Nch MOSFET EM6K6 Structure Dimensions (Unit : mm) Silicon N-channel

MOSFET

Applications Switching

Features

Each lead has same dimensions

1) The MOSFET elements are independent,

Abbreviated symbol : K06

eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (1.8V) makes this device ideal for portable equipment.

Packaging specifications Equivalent circuit

Protection (4)(5)(6)

Package Taping

Diode

Code T2R

Basic ordering unit (pieces)

EM6K6

(1)Tr1 Source (2)Tr1 Gate (3)Tr2 Drain

Gate (4)Tr2 Source

Absolute maximum ratings (Ta=25°C) Protection

(1) (2) (3) (5)Tr2 Gate Diode

(6)Tr1 Drain

<It is the same ratings for the Tr1 and Tr2>

∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product

Parameter Symbol Limits Unit is in use. Use the protection circuit when rated voltages are exceeded.

Drain−source voltage VDSS Gate−source voltage VGSS ±8

Continuous ID ±300 m A

Drain current

Pulsed IDP ±600 m A

m W / TOTAL

Total power dissipation PD

m W / ELEMENT120

Channel temperature Tch °C

Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

°C/W / TOTAL

Channel to ambient Rth(ch-a)

°C/W / ELEMENT1042

∗ Each terminal mounted on a recommended land

Page Summary Contents For ROHM EM6K6 Data Sheet Manual

Page 1 EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Applications Switching Features Each lead has same dimensions 1) The MOSFET elements are inde...
Page 2 IN ID EM6K6 Transistor Electrical characteristics (Ta=25°C) &lt;It is the same characteristics for the Tr1 and Tr2&gt; Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA V...
Page 3 IT IN IM EM6K6 t ( ns IC IN -S -S IS (o n) Transistor VGS=1.8V VGS=0V Ta=25°C Pulsed Pulsed f=1MHZ Ta=125°C VGS=0V Ta=125°C 75°C 0.1 25°C 0.1 IS DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) D...
Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 4
File Size 103.25 KB
Published June 17, 2026
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Frequently Asked Questions

How can I reduce mounting costs and area when using this MOSFET?

The device allows for methods that can cut both the mounting cost and required area in half.

What is the recommended protection measure for static electricity?

Use the built-in protection circuit, which protects against static electricity when rated voltages are exceeded.

What safety precautions must I take during circuit design?

Designers must carefully consider derating characteristics and allow for sufficient safety features like extra margin or anti-flammability.