Fairchild BDX54A B C Data Handbook
Summary
These technical specifications cover BDX54/A/B/C, a series of high-power PNP Epitaxial Silicon Transistors packaged in TO-220 format. Ideal for designers working on audio amplifiers, power linear regulators, and general switching applications, this datasheet provides critical electrical characteristics including absolute maximum ratings, saturation voltages, current gain, and safe operational areas. It is an essential resource for engineers selecting reliable power components for demanding electronic circuits.
Page 1 Text Content
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BDX54/A/B/C
Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX53, BDX53A, BDX53B and BDX53C respectively
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units
VCBO Collector-Base Voltage : BDX54 - 45
: BDX54A - 60 : BDX54B - 80 : BDX54C - 100
VCEO Collector-Emitter Voltage : BDX54 - 45
: BDX54A - 60 : BDX54B - 80 : BDX54C - 100
Emitter-Base Voltage - 5
VEBO IC Collector Current (DC) - 8
ICP *Collector Current (Pulse) - 12 IB Base Current - 0.2 PC Collector Dissipation (TC=25°C) TJ Junction Temperature °C TSTG Storage Temperature - 65 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage
: BDX54 IC = - 100m A, IB = 0 - 45 : BDX54A - 60 : BDX54B - 80 : BDX54C - 100
ICBO Collector Cut-off Current : BDX54 VCB = - 45V, IE = 0 - 200 µA : BDX54A VCB = - 60V, IE = 0 - 200 µA
: BDX54B VCB = - 80V, IE = 0 - 200 µA
: BDX54C VCB = - 100V, IE = 0 - 200 µA ICEO Collector Cut-off Current : BDX54 VCE = - 22V, IB = 0 - 500 µA : BDX54A VCE = - 30V, IB = 0 - 500 µA
: BDX54B VCE = - 40V, IB = 0 - 500 µA
: BDX54C VCE = - 50V, IB = 0 - 500 µA
Emitter Cut-off Current VEB = - 5V, IC = 0 - 2 m A
* DC Current Gain VCE = - 3V, IC = - 3A
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 12m A - 2 VBE(sat) * Base-Emitter Saturation Voltage IC = - 3A, IB = - 12m A - 2.5
VF * Parallel Diode Forward Voltage IF = - 3A - 1.8 - 2.5 IF = - 8A - 2.5
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page Summary Contents For Fairchild BDX54A B C Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 4 |
| File Size | 40.25 KB |
| Published | July 22, 2026 |
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Frequently Asked Questions
What is the maximum continuous collector dissipation rating for this device?
The maximum power dissipation listed is 60 W when the junction temperature is held at T = 25°C.
How do I select the correct voltage variant (A, B, or C)?
Selection depends on the required Collector-Emitter Voltage; for instance, BDX54C handles up to 100V, while BDX54 limits are lower.
Can these transistors be used in life support systems?
No. Fairchild's products are not authorized for use as critical components in life support devices without express written written approval.