Fairchild BAT54SWT1G, BAT54CWT1G Schottky Diodes Data Manual

AT54SW T1G /B AT54C T1G Schottky D iodes

April 2005

BAT54SWT1G/BAT54CWT1G Schottky Diodes

Connection Diagram

BAT54CWT1GBAT54SWT1G

MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current m A

IFSM Non-repetitive Peak Forward Surge Current m A

Pulse Width = 1.0 second

TSTG Storage Temperature Range -65 to +125 °C

TJ Operating Junction Temperature -65 to +125 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics Symbol Parameter Value Unit PD Power Dissipation m W

RθJA Thermal Resistance, Junction to Ambient °C/W

FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)

Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Conditions Min. Max. Units VR Breakdown Voltage IR = 10µA

VF Forward Voltage IF = 0.1m A m V IF = 1m A m V IF = 10m A m V IF = 30m A m V

IF = 100m A 0.8

IR Reverse Leakage VR = 25V µA

CT Total Capacitance VR = 1V, f = 1.0MHz p F

trr Reverse Recovery Time IF = IR = 10m A, IRR = 1.0m A, 5.0 ns

RL = 100Ω

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com BAT54SWT1G/BAT54CWT1G Rev. A