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Dell Inspiron BFP740F Owner's Manual

Summary

Infineon BFP740F NPN Silicon Germanium RF transistor datasheet featuring 150GHz transition frequency for wireless applications up to 10GHz and beyond. Specifications include outstanding 0.5dB noise figure at 1.8GHz, 0.75dB at 6GHz, 27.5dB maximum stable gain at 1.8GHz, 4V collector-emitter voltage, gold metallization, and TSFP-4 surface-mount package for CDMA and WLAN RF front-end designs.

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BFP740F

NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 d B at 1.8 GHz Outstanding noise figure F = 0.75 d B at 6 GHz Top View • High maximum stable gain

Gms = 27.5 d B at 1.8 GHz • Gold metallization for extra high reliability

Direction of Unreeling

• 150 GHz f T-Silicon Germanium technology

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package BFP740F R7s 1=B 2=E 3=C 4=E TSFP-4 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO TA > 0°C

TA ≤ 0°C 3.5

Collector-emitter voltage VCES Collector-base voltage VCBO

Emitter-base voltage VEBO 1.2

Collector current IC m A

Base current IB

Total power dissipation1) Ptot m W

TS ≤ 90°C

Junction temperature °C

Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 1TS is measured on the collector lead at the soldering point to the pcb

Page Summary Contents For Dell Inspiron BFP740F Owner's Manual

Page 1 BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDM...
Page 2 BFP740F Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) Rth JS ≤ 370 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit mi...
Page 3 BFP740F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T GHz IC...
Page 4 BFP740F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = 384.4 a A BF = 1.1 NF = 1.018 VAF = IKF = 512.1 m A ISE = 4.296 f A NE = 1.586 BR = NR = VAR = 1.28 IK...
Page 5 /P BFP740F ot ax to t D ot Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Rth JS = ƒ(tp) th JS [p 0,005 cb °C 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s TS tp Permissible Pulse Load Colle...
Page 6 BFP740F [d IP Third order Intercept Point IP3 = ƒ (IC) Transition frequency f T = ƒ(IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter in V, f = 2 GHz VCE = parameter, f = 900 MHz 4.00V 2V to 4V 3.00V Powe...
Page 7 [d BFP740F Power gain Gma, Gms = ƒ (VCE) Noise figure F = ƒ(IC) IC = 25 m A VCE = 3 V, f = parameter in GHz f = parameter in GHz ZS = ZSopt 0.90GHz 1.80GHz 2.40GHz f = 6GHz 3.00GHz 1.4 f = 5GHz 4.00GH...
Page 8 BFP740F Source impedance for min. noise figure vs. frequency VCE = 3 V, IC = 8 m A / 25 m A 4GHz 5GHz 3GHz 0.1 2.4GHz 1.8GHz 0.4 6GHz 10.2 0.9GHz
Page 9 Package TSFP-4 BFP740F Package Out ine Foot Pr int Marking Layout Manufacturer Pin 1 Type code BFP420F Example Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1...
Page 10 BFP740F Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe ...

Manual Details

Brand Dell
Pages 10
File Size 171.53 KB
Published July 03, 2026
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Frequently Asked Questions

What types of wireless applications is the BFP740F ideal for?

It is ideal for a wide range of applications, such as CDMA and WLAN, operating up to 10 GHz and beyond.

Does this component require special handling during installation?

Yes, it is an ESD (Electrostatic discharge) sensitive device; observe proper handling precaution!

What are the electrical breakdown limits for operation?

The maximum collector-emitter voltage (VCEO) at ambient temperatures above 0°C is 4 A.

What key performance indicators define its RF capabilities?

It offers outstanding noise figures: F = 0.5 dB at 1.8 GHz and F = 0.75 dB at 6 GHz, with a maximum stable gain of 27.5 dB (at 1.8 GHz).