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Dell Inspiron BFP540 Owner's Manual

Summary

Infineon BFP540 NPN Silicon RF transistor datasheet based on SIEGET-45 technology for high-gain low-noise amplifier applications at 1.8GHz. Specifications include 21dB maximum stable gain, 0.9dB noise figure, 30GHz transition frequency, 4.5V collector-emitter breakdown, 80mA collector current, 250mW power dissipation, gold metallization, and SOT343 surface-mount package with ESD handling precautions.

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BFP540

NPN Silicon RF Transistor

• For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21 d B Noise Figure F = 0.9 d B • Gold metallization for high reliability VPS05605 • SIEGET 45 - Line

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package BFP540 ATs 1=B 2=E 3=C 4=E SOT343 Maximum Ratings Parameter Symbol Value Unit

Collector-emitter voltage VCEO 4.5

Collector-emitter voltage VCES Collector-base voltage VCBO Emitter-base voltage VEBO

Collector current IC m A

Base current IB

Total power dissipation1) Ptot m W

TS ≤ 77°C

Junction temperature °C

Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit

Junction - soldering point2) Rth JS ≤ 290 K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of Rth JA please refer to Application Note Thermal Resistance

Jan-28-20041

Page Summary Contents For Dell Inspiron BFP540 Owner's Manual

Page 1 BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21 d B Noise Figure F = 0.9 d B • Gold metallization for high reliability VPS05605 • SIEGET 45 - ...
Page 2 BFP540 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 4.5 IC = 1 m A, I...
Page 3 BFP540 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T GHz IC ...
Page 4 BFP540 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = 82.84 a A BF = 107.5 NF = VAF = 28.383 IKF = 0.48731 ISE = 11.15 f A NE = 3.19 BR = 5.5 NR = VAR = 19.7...
Page 5 / P ot ot ax to t D BFP540 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Rth JS = ƒ(tp) th JS TS tp Permissible Pulse Load Collector-base capacitance Ccb= ƒ(VCB) Ptotmax/Ptot DC = ƒ(tp) ...
Page 6 BFP540 Transition frequency f T= ƒ(IC) Power gain Gma, Gms = ƒ(IC) f = 1GHz VCE = 2V VCE = Parameter in V f = Parameter in GHz IC IC Power Gain Gma, Gms = ƒ(f), Power gain Gma, Gms = ƒ (VCE) |S21|² = ...
Page 7 BFP540 Noise figure F = ƒ(IC) Noise figure F = ƒ(IC) VCE = 2V, ZS = ZSopt VCE = 2V, f = 1.8GHz 1.5 f = 6GHz 1.5 f = 5GHz f = 4GHz f = 3GHz ZS = 50Ohm f = 2.4GHz ZS = Zsopt f = 1.8GHz f = 0.9GHz m A m ...

Manual Details

Brand Dell
Pages 7
File Size 174.41 KB
Published July 03, 2026
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Frequently Asked Questions

What is the typical noise figure at 1.8 GHz?

The typical noise figure (F) is 0.9 dB.

Is this device sensitive to static discharge?

Yes, it is an ESD sensitive device, so handling precautions should be observed.

What is the maximum allowable collector current?

The maximum specified collector current (I_C) is 80 mA.

Does the transistor have a power dissipation limit?

Total power dissipation (P_tot) must not exceed 290 mW.