ATMEL AT49BV160DT Data Handbook
Summary
This 16-megabit Flash memory solution is designed for reliable, in-system programming requiring single voltage read/write operation. Featuring robust sector erase architecture and critical data protection via suspend/resume capabilities, it ensures stable data management even during complex write cycles. The technical manual provides comprehensive guidance covering command sequences, device operational modes (Read, Program, Erase), pin configurations, and timing requirements for electrical engineers integrating the chip into demanding electronic designs.
Page 1 Text Content
BDTIC www.BDTIC.com/ATMEL
Features Single Voltage Read/Write Operation: 2.65V to 3.6V Access Time – 70 ns Sector Erase Architecture Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 10 µs Fast Sector Erase Time – 100 ms Suspend/Resume Feature for Erase and Program
Supports Reading and Programming from Any Sector by Suspending Erase 16-megabit
of a Different Sector
Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation
3-volt Only
10 m A Active 15 µA Standby
Flash Memory
VPP Pin for Write Protection and Accelerated Program Operation WP Pin for Sector Protection RESET Input for Device Initialization
AT49BV160D
Flexible Sector Protection TSOP Package
AT49BV160DT
Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles Common Flash Interface (CFI) Green (Pb/Halide-free) Packaging
1. Description The AT49BV160D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see “Flexible Sector Protection” on page 6). To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The VPP pin provides data protection. When the VPP input is below 0.4V, the program and erase functions are inhibited. When VPP is at 1.65V or above, normal program and erase operations can be performed. With VPP at 10.0V, the program (Dual-word Program Command) operation is accelerated.
3591C–FLASH–6/06
Page Summary Contents For ATMEL AT49BV160DT Data Handbook
Manual Details
| Brand | Atmel |
|---|---|
| Pages | 28 |
| File Size | 501.78 KB |
| Published | May 15, 2026 |
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Frequently Asked Questions
What is the basic operating voltage range for this memory device?
The memory operates across a single voltage range of 2.65V to 3.6V, which also supports low-power operation at 3 volts only.
How does the device protect sectors or data written in different areas?
It features Flexible Sector Protection and includes an Erase Suspend/Program Suspend feature, allowing you to maintain read/write access while operations occur on other sectors.
What voltage is required for accelerated programming operations?
The VPP pin must be set at 10.0V to accelerate the program (Dual-word PP Program Command) operation.
How can I initiate a controlled reset of the device?
A dedicated RESET input pin can be used; pulling it low halts current operation, and reasserting a high level restarts the read mode.