PHILIPS BSH107 Data Manual
Summary
This product specification covers the N-channel enhancement mode MOS transistor BSH107, ideal for battery-powered applications and high-speed digital interfacing. Designed for logic level operation, it features very low threshold voltage and fast switching in a subminiature SOT457 surface mount package.
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Philips Semiconductors Product specification
N-channel enhancement mode BSH107 MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = 20 V • Fast switching • Logic level compatible ID = 1.75 A • Subminiature surface mount package RDS(ON) ≤ 90 mΩ (VGS = 2.5 V)
VGS(TO) ≥ 0.4 V
GENERAL DESCRIPTION PINNING SOT457 N-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has very low 1,2,5,6 drain
Top view
threshold voltage and extremely fast switching making it ideal for gate battery powered applications and high speed digital interfacing. source
The BSH107 is supplied in the SOT457 subminiature surface mounting package.
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ VGS Gate-source voltage ± 8 ID Drain current (DC) Ta = 25 ˚C 1.75
Ta = 100 ˚C 1.1
IDM Drain current (pulse peak value) Ta = 25 ˚C Ptot Total power dissipation Ta = 25 ˚C 0.417
Ta = 100 ˚C 0.17
Tstg, Tj Storage & operating temperature - 55 ˚C
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-a Thermal resistance junction to FR4 board, minimum K/W
ambient footprint
August 1998 Rev 1.000
Page Summary Contents For PHILIPS BSH107 Data Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 7 |
| File Size | 154.52 KB |
| Published | June 20, 2026 |
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Frequently Asked Questions
What is the pin configuration of the BSH107?
Pins 1,2,5,6 are drain, pin 3 is gate, pin 4 is source.
What is the maximum continuous drain current at 25°C?
1.75 A DC, with a pulse peak of 7 A.
What is the typical gate threshold voltage?
Minimum 0.4 V, typical 0.57 V at I_D=1 mA.
Is this transistor suitable for battery-powered applications?
Yes, due to very low threshold voltage and extremely fast switching.