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Philips BFG505W Data Manual

Summary

This technical manual details the specifications for the BFG505W, BFG505W/X, and BFG505W/XR NPN wideband transistors. Designed for high-frequency applications up to 9 GHz, these devices offer high gain and low noise figures. The guide covers electrical characteristics, absolute maximum ratings, thermal performance, and packaging details for use in RF front ends, cellular phones, and radar systems.

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查询BFG505X供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors Product specification Oct Supersedes data of 1998 Oct 02

Page Summary Contents For Philips BFG505W Data Manual

Page 1 查询BFG505X供应商 DISCRETE SEMICONDUCTORS DATA SHEET BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors Product specification Oct Supersedes data of 1998 Oct 02
Page 2 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR FEATURES MARKING High power gain TYPE NUMBER CODE Low noise figure BFG505W N0 High transition...
Page 3 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PAR...
Page 4 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR CHARACTERISTICS Tj °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. ...
Page 5 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR MRA639 MLC032 0.4 handbook, halfpage handbook, halfpage h FE Cre (p F) IC (m A) V (V)CB VCE V...
Page 6 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR MLC034 MLC035 handbook, halfpage handbook, halfpage gain gain (d B) (d B) MSG GUM MSG Gmax GU...
Page 7 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR MRA650 MLC038 handbook, halfpage handbook, halfpage Fmin f = 900 MHz Gass (d B) (d B) 1000 MH...
Page 8 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR handbook, full pagewidth pot. unst. 90° region stability circle Fmin = 1. 2 d B ΓOPT 0.2 MRA6...
Page 9 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR handbook, full pagewidth 90o 3 GHz 40 MHz MLC040 VCE V; IC m A; Zo Ω. Fig.17 Common emitter i...
Page 10 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR handbook, full pagewidth 90o 3 GHz 40 MHz MLC042 VCE ; IC m A. Fig.19 Common emitter reverse ...
Page 11 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR SPICE parameters for the BFG505W die SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. PARAMETER...
Page 12 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT343N b1 bp Lp detail X scale DIM...
Page 13 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR Plastic surface mounted package; reverse pinning; 4 leads SOT343R bp b1 Lp detail X scale DIM...
Page 14 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR DATA SHEET STATUS PRODUCT DATA SHEET STATUS DEFINITIONS STATUS Objective specification Develo...
Page 15 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR NOTES
Page 16 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 3 Figtree Drive, HOMEBUSH, NSW 21...

Manual Details

Brand Philips
Pages 16
File Size 123.49 KB
Published June 20, 2026
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Frequently Asked Questions

What is the maximum DC collector current for the BFG505W transistor?

18 mA.

What is the typical noise figure at 900 MHz?

1.2 dB (IC=1.25 mA, VCE=6 V).

What is the pin configuration of the BFG505W?

Pin 1 collector, pin 2 base, pins 3 and 4 emitter.

What is the maximum junction temperature allowed?

175 °C.