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AMD Am29LV033C Data Sheet

Summary

The Am29LV033C is a high-performance 32Mbit Flash Memory designed for demanding embedded applications requiring reliable, non-volatile storage. This technical document details comprehensive specifications covering architectural advantages, including ultra low power consumption, single voltage supply compatibility (2.7–3.6V), and accelerated read/write procedures. Engineers and system developers needing high-speed, energy-efficient memory solutions will find this guide essential for seamless integration into sophisticated embedded systems.

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查询AM29LV033C供应商 Am29LV033C Data Sheet

July 2003

The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig- inally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.

Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document.

For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions.

Publication Number 22268 Revision Amendment +2 Issue Date November 7, 2000

Page Summary Contents For AMD Am29LV033C Data Sheet

Page 1 查询AM29LV033C供应商 Am29LV033C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is mark...
Page 2 Am29LV033C 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES Zero Power Operation Supports Common Flash Mem...
Page 3 GENERAL DESCRIPTION The Am29LV033C is a 32 Mbit, 3.0 Volt-only Flash The host system can detect whether a program or memory organized as 4,194,304 bytes. The device is erase operation is complete by o...
Page 4 TABLE OF CONTENTS Distinctive Characteristics . . . . . . . . . . . . . . . . . . .1 Figure 5. Data# Polling Algorithm................................ 24 General Description . . . . . . . . . . . . . ...
Page 5 PRODUCT SELECTOR GUIDE Family Part Number Am29LV033C Speed Option Full Voltage Range: VCC = 2.7–3.6 V -70 -90 -120 Max Access Time (ns) CE# Access (ns) OE# Access (ns) Note: See “AC Characteristics” f...
Page 6 CONNECTION DIAGRAMS A16 A17 A15 VSS A11 DQ7 A9 DQ6 A8 DQ5 WE# DQ4 RESET# VCC 40-Pin Standard TSOP ACC VCC RY/BY# A21 A18 DQ3 A7 DQ2 A6 DQ1 A5 DQ0 A4 OE# A3 VSS A2 CE# A17 A16 VSS A15 A20 A14 A19 A13 A...
Page 7 CONNECTION DIAGRAMS 63-Ball FBGA (Top View, Balls Down) NC* NC* NC* NC* NC*NC* A14 A13 A15 A16 A17 NC A20 VSS NC* NC* A9 A8 A11 A12 A19 A10 DQ6 DQ7 WE# RESET# NC NC DQ5 NC VCC DQ4 RY/BY# ACC NC NC DQ2...
Page 8 PIN CONFIGURATION LOGIC SYMBOL A0–A21 22 addresses DQ0–DQ7 8 data inputs/outputs A0–A21 CE# Chip enable DQ0–DQ7 OE# = Output enable WE# Write enable CE# RESET# Hardware reset pin, active low OE# RY/BY...
Page 9 ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combi- nation) is formed by a combination of the elements b...
Page 10 DEVICE BUS OPERATIONS This section describes the requirements and use of the register serve as inputs to the internal state ma- the device bus operations, which are initiated through chine. The state ...
Page 11 space that each sector occupies. A “sector address” the standby current will be greater. The device re- consists of the address bits required to uniquely select quires standard access time (t CE) for ...
Page 12 within a time of t READY (not during Embedded Algo- Output Disable Mode rithms). The system can read data t RH after the RE- When the OE# input is at VIH, output from the device is SET# pin returns to...
Page 13 Table 2. Am29LV033C Sector Address Table (Continued) Address Range Sector A21 A20 A19 A18 A17 A16 (in hexadecimal) SA32 200000–20FFFF SA33 210000–21FFFF SA34 220000–22FFFF SA35 230000–23FFFF SA36 2400...
Page 14 Autoselect Mode the remaining address bits that are don’t care. When all necessary bits have been set as required, the pro- The autoselect mode provides manufacturer and de- gramming equipment may the...
Page 15 Table 4. Sector Block Addresses for Temporary Sector/Sector Block Unprotect Protection/Unprotection (Note: For the following discussion, the term “sector” Sector/ Sector/ applies to both sectors and s...
Page 16 START START Protect all sectors: PLSCNT = 1 PLSCNT = 1 The indicated portion of the sector protect RESET# = VID algorithm must be RESET# = VID performed for all unprotected sectors Wait 1 µs Wait 1 µs...
Page 17 Hardware Data Protection vide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. The command sequence requirement of unlock cycles for programming or...
Page 18 Table 6. System Interface String Addresses Data Description VCC Min. (write/erase) 1Bh 27h D7–D4: volt, D3–D0: 100 millivolt VCC Max. (write/erase) 1Ch 36h D7–D4: volt, D3–D0: 100 millivolt 1Dh 00h VP...
Page 19 Table 8. Primary Vendor-Specific Extended Query Addresses Data Description 40h 50h 41h 52h Query-unique ASCII string “PRI” 42h 49h 43h 31h Major version number, ASCII 44h 30h Minor version number, ASC...
Page 20 COMMAND DEFINITIONS Writing specific address and data commands or se- The reset command may be written between the se- quences into the command register initiates device op- quence cycles in an autose...
Page 21 quence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed in any sequence and across START sector boundaries. A bit cannot be progr...
Page 22 vice has returned to reading array data, to ensure data mands are ignored. Note that a hardware reset dur- integrity. ing the sector erase operation immediately terminates the operation. The Sector Er...
Page 23 gram operation. See “Write Operation Status” for more information. START The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows readi...
Page 24 Table 9. Am29LV033C Command Definitions ut os el ec Bus Cycles (Notes 2–4) (N ot 7) Command Sequence First Second Third Fourth Fifth Sixth (Note 1) Addr Data Addr Data Addr Data Addr Data Addr Data Ad...
Page 25 WRITE OPERATION STATUS The device provides several bits to determine the sta- Table 10 shows the outputs for Data# Polling on DQ7. tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, Figure 5 shows the...
Page 26 RY/BY#: Ready/Busy# DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Pro- The RY/BY# is a dedicated, open-drain output pin that gram algorithm is complete. ...
Page 27 toggling, the device has successfully completed the program or erase operation. If it is still toggling, the de- vice did not completed the operation successfully, and START the system must write the ...
Page 28 Table 10. Write Operation Status DQ7 DQ5 DQ2 Operation (Note 2) DQ6 (Note 1) DQ3 (Note 2) RY/BY# Standard Embedded Program Algorithm DQ7# Toggle N/A No toggle Mode Embedded Erase Algorithm Toggle Togg...
Page 29 ABSOLUTE MAXIMUM RATINGS OPERATING RANGES Storage Temperature Commercial (C) Devices Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature (TA). . . . . . . . . . . .0°C t...
Page 30 DC CHARACTERISTICS CMOS Compatible Parameter Description Test Conditions Min Typ Max Unit VIN = VSS to VCC, ILI Input Load Current (Note 1) ±1.0 µA VCC = VCC max ILIT A9 Input Load Current VCC = VCC m...
Page 31 DC CHARACTERISTICS (Continued) ly rr en in Zero Power Flash ly rr en in Time in ns Note: Addresses are switching at 1 MHz Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) ...
Page 32 TEST CONDITIONS Table 11. Test Specifications Test Condition -70 -90, -120 Unit Output Load 1 TTL gate Device Output Load Under Capacitance, CL p F (including jig capacitance) CL 6.2 kΩ Input Rise and...
Page 33 AC CHARACTERISTICS Read Operations Parameter Speed Option JEDEC Std Description Test Setup -70 -90 -120 Unit t AVAV t RC Read Cycle Time (Note 1) Min ns CE# = VIL t AVQV t ACC Address to Output Delay ...
Page 34 AC CHARACTERISTICS Hardware Reset (RESET#) Parameter Std Description Test Setup All Speed Options JEDEC Unit RESET# Pin Low (During Embedded Algorithms) t READY Max µs to Read or Write (See Note) RESE...
Page 35 AC CHARACTERISTICS Erase/Program Operations Parameter Speed Option JEDEC Std Description -70 -90 -120 Unit t AVAV t WC Write Cycle Time (Note 1) Min ns t AVWL t AS Address Setup Time Min ns t WLAX t A...
Page 36 AC CHARACTERISTICS Program Command Sequence (last two cycles) Read Status Data (last two cycles) t WC t AS Addresses XXXh PA PA PA t WHWH1 t WPH t DS t DH A0h PD Status DOUT t RBt BUSY RY/BY# t VCS No...
Page 37 AC CHARACTERISTICS Erase Command Sequence (last two cycles) Read Status Data t WC t AS Addresses XXXh SA VAVA XXXh for chip erase t WPH t WHWH2 t CS t DS Data 55h 30h Complete Progress 10 for Chip Era...
Page 38 AC CHARACTERISTICS Addresses VA VA VA t ACC t CE t OEH t DF High Z DQ7 Complement Complement True Valid Data High Z DQ0–DQ6 True Valid Data Status Data Status Data t BUSY RY/BY# Note: VA = Valid addre...
Page 39 AC CHARACTERISTICS Temporary Sector/Sector Block Unprotect Parameter Std Description All Speed Options JEDEC Unit t VIDR VID Rise and Fall Time (See Note) Min ns RESET# Setup Time for Temporary t RSP ...
Page 40 RESET# SA, A6, Valid* Valid* Valid* Sector/Sector Block Protect or Unprotect Verify Data 60h 60h 40h Status Sector/Sector Block Protect: 150 µs, Sector/Sector Block Unprotect: 15 ms Note: For sector p...

Manual Details

Brand AMD
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Published May 14, 2026
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Frequently Asked Questions

What is the supported voltage range for read and write operations?

The device supports a full voltage range of 2.7 to 3.6 volts, allowing single power supply operation.

How fast can data be accessed using this memory?

Access times are rated as fast as 70 ns when utilizing the accelerated (ACC) function.

Is external power needed for program or erase operations?

No, it supports standard single-power-supply operation and can complete read/program/erase cycles using only one supply.