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Taiwan Semiconductor - BZD27C3V6P to BZD27C200P Zener Diodes with Surge Current Specification Data Manual User Guide

Summary

These Vishay Semiconductor Zener Diodes are essential, low-profile Surface Mount Device (SMD) components engineered for highly reliable voltage regulation and circuit protection. The manual provides comprehensive electrical and thermal data for a wide range of voltages (3V to 200V), detailing surge current specifications, leakage characteristics, and operational stability. It is designed for electronics engineers and designers requiring stable power solutions that meet modern compliance standards (RoHS/Pb-free) in demanding applications.

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BZD27C3V6P to BZD27C200P

Vishay Semiconductors

Zener Diodes with Surge Current Specification

Features Sillicon Planar Zener Diodes Low profile surface-mount package

Zener and surge current specification Low leakage current Excellent stability High temperature soldering: °C/10 sec. at terminals Lead (Pb)-free component Component in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC

Mechanical Data Packaging codes/options: Case: JEDEC DO-219AB (SMF®) Plastic case GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box Weight: approx. 15 mg GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box

Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified

Parameter Test condition Symbol Value Unit

Power dissipation TL = 80 °C Ptot 2.3

TA = 25 °C Ptot

Non-repetitive peak pulse power PZSM

100 µs square pulse2)

dissipation

10/1000 µs waveform (BZD27- PRSM

C7V5P to BZD27-C100P)2)

10/1000 µs waveform (BZD27- PRSM

C110P to BZD27-C200P)2)

1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)

2) TJ = 25

°C prior to surge

Thermal Characteristics Tamb = 25 °C, unless otherwise specified

Parameter Test condition Symbol Value Unit

Rth JA K/W

Thermal resistance junction to ambient air1) Thermal resistance junction to lead Rth JL K/W Maximum junction temperature Tj °C Storage temperature range TS - 55 to + 150 °C 1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)

Electrical Characteristics Tamb = 25 °C, unless otherwise specified

Parameter Test condition Symbol Min Typ. Max Unit

Forward voltage IF = 0.2 A VF 1.2

Document Number 85810 www.vishay.com Rev. 1.8, 13-Apr-05

Page Summary Contents For Taiwan Semiconductor - BZD27C3V6P to BZD27C200P Zener Diodes with Surge Current Specification Data Manual User Guide

Page 1 BZD27C3V6P to BZD27C200P Vishay Semiconductors Zener Diodes with Surge Current Specification Features Sillicon Planar Zener Diodes Low profile surface-mount package Zener and surge current specificati...
Page 2 BZD27C3V6P to BZD27C200P Vishay Semiconductors Electrical Characteristics When used as voltage regulator diodes (TJ = 25 °C unless otherwise noted) Partnumber Marking Differential Temperature Test Rev...
Page 3 BZD27C3V6P to BZD27C200P Vishay Semiconductors Electrical Characteristics When used as protection diodes (TJ = 25 °C unless otherwise noted) Partnumber Rev. Test Temperature Coefficient Clamping Volta...
Page 4 BZD27C3V6P to BZD27C200P Ty p. un ct io ap ac ita nc p F ow er is si pa tio to or ar ur re nt Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Typ. VF Max. VF VF...
Page 5 BZD27C3V6P to BZD27C200P Vishay Semiconductors Package Dimensions in mm (Inches) Cathode Band Detail View enlarged 0.10 max ISO Method Mounting Pad Layout 1.6 (0.062) 1.3 (0.051) Document Number 85810...
Page 6 BZD27C3V6P to BZD27C200P Vishay Semiconductors Blistertape for SMF www.vishay.com Document Number 85810 Rev. 1.8, 13-Apr-05
Page 7 BZD27C3V6P to BZD27C200P Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor Gmb H to 1. Meet all present and future national and international s...
Page 8 This datasheet has been downloaded from: www.Datasheet Catalog.com Datasheets for electronic components.