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PHILIPS SAA4956TJ Data Sheet

Summary

This technical specification details the SAA4956TJ, a high-performance 2.9-Mbit field memory designed for demanding applications such as video processing and display systems (e.g., TV tuners). The device features optional noise reduction, FIFO operations, and cascade capabilities for reliable data storage. This manual is essential for engineers and circuit designers, covering operational guidelines, detailed electrical characteristics, physical packaging requirements, and advanced technical procedures necessary for successful integration into your hardware design.

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INTEGRATED CIRCUITS

DATA SHEET

SAA4956TJ 2.9-Mbit field memory with noise reduction

Preliminary specification Dec

File under Integrated Circuits, IC02

Page Summary Contents For PHILIPS SAA4956TJ Data Sheet

Page 1 查询SAA4956TJ供应商 INTEGRATED CIRCUITS DATA SHEET SAA4956TJ 2.9-Mbit field memory with noise reduction Preliminary specification Dec File under Integrated Circuits, IC02
Page 2 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ CONTENTS LIMITING VALUES THERMAL CHARACTERISTICS FEATURES CHARACTERISTICS GENERAL DESCRIPTION APPL...
Page 3 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ FEATURES 2949264-bit field memory with optional field based noise reduction 12-bit organization 3....
Page 4 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Tcy(SWCK) SWCK cycle time NRE...
Page 5 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ BLOCK DIAGRAM handbook, full pagewidth D0(V0) to D11(Y7) IE NREN SCL SDA WE RSTW SWCK 14 to 3 DATA...
Page 6 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ PINNING SYMBOL PIN I/O DESCRIPTION SCL digital input serial clock of I2C-bus GND ground general pu...
Page 7 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ the read operation frequency. In this case the random block access modes are not supported because...
Page 8 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ During this time, control signals WE and IE will function as The address area reserved for the min...
Page 9 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 7.1.2 READ OPERATION The data output pins are not controlled by the OE pin and are forced into hig...
Page 10 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 7.1.3 POWER-UP AND INITIALIZATION 7.1.5 MEMORY ARBITRATION LOGIC AND SELF-REFRESH Reliable operati...
Page 11 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 7.2 Noise reduction function handbook, full pagewidth data input D-field delay data input D-field ...
Page 12 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ The main function of the noise reduction is shown in Fig.3. The averaging in chrominance can be sl...
Page 13 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ The start position, when the first phase of the 4 1 YUV The amplified signals, which correlate to ...
Page 14 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 7.2.5 NOISE SHAPE There is no ‘wrap around’ of subaddresses. Commands and data are processed as so...
Page 15 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ Table 6 Write registers REGISTER BIT NAME DEFAULT FUNCTION Subregister 20H to 23H (Ksteps of the l...
Page 16 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER ...
Page 17 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ CHARACTERISTICS VDD VDD(O) VDD(P) 3.0 to 3.6 V; Tamb to °C; 3 ns input transition times; unless ot...
Page 18 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ SYMBOL PARAMETER CONDITIONS MIN. TYP.(1) MAX. UNIT tsu(D) set-up time data inputs (D0 to D11) see ...
Page 19 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth N − 1N − 2 Tcy(SWCK) th(RSTW) tt tw(SWCKH) tw(SWCKL) tsu(RSTW) tsu(RSTW)t...
Page 20 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth start sequence serial input of write block address write latency write da...
Page 21 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth N − 1 disable disable N + 1 tsu(WE) th(WE) th(WE) tsu(WE) tw(WEL) tsu(D) ...
Page 22 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth N + 7N + 6N + 5N + 4N + 3N + 2N + 1N D0 to D11 N + 3N + 2N + 1 N + 6 N + ...
Page 23 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth N − 1 Tcy(SRCK) th(RSTR) tt tw(SRCKH) tw(SRCKL) tsu(RSTR)tsu(RSTR)th(RSTR...
Page 24 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth start sequence serial input of read block address read latency read data ...
Page 25 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth disable disable N + 3 N + 4 tsu(OE) th(OE) th(OE) tsu(OE) tw(OEL) t ACC t...
Page 26 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth WE and IE new new new new new new new D0 to D11 minimum number of SWCK cy...
Page 27 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth WE and IE new new new new new new new D0 to D11 maximum number of SWCK cy...
Page 28 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth reset signal serial clock RSTW RSTR RSTW RSTR SWCK SRCK SWCK SRCK D0(V0) ...
Page 29 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ APPLICATION INFORMATION handbook, full pagewidth UIN VIN SCL SWC D11 D11 RSTW D10 D10 WE D9 D4 SAA...
Page 30 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ PACKAGE OUTLINE SOJ40: plastic small outline package; 40 leads (J-bent); body width 10.16 mm SOT44...
Page 31 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ SOLDERING Use a double-wave soldering method comprising a turbulent wave with high upward pressure...
Page 32 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 13.5 Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METH...
Page 33 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal spec...
Page 34 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ NOTES
Page 35 Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ NOTES
Page 36 Philips Semiconductors – a worldwide company Argentina: see South America Middle East: see Italy Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg....

Manual Details

Brand Philips
Pages 36
File Size 253.42 KB
Published June 20, 2026
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Frequently Asked Questions

What is the maximum storage depth?

245772 words × 12 bits

Is the SAA4956TJ compatible with SAA4955TJ?

Yes, functional and pin compatible

What is the typical supply current?

27 mA at min r/w cycle

Can two SAA4956TJs be cascaded?

Yes, for larger storage or longer delay