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查询SAA4956TJ供应商 INTEGRATED CIRCUITS DATA SHEET SAA4956TJ 2.9-Mbit field memory with noise reduction Preliminary specification Dec File under Integrated Circuits, IC02
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ CONTENTS LIMITING VALUES THERMAL CHARACTERISTICS FEATURES CHARACTERISTICS GENERAL DESCRIPTION APPL...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ FEATURES 2949264-bit field memory with optional field based noise reduction 12-bit organization 3....
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Tcy(SWCK) SWCK cycle time NRE...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ BLOCK DIAGRAM handbook, full pagewidth D0(V0) to D11(Y7) IE NREN SCL SDA WE RSTW SWCK 14 to 3 DATA...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ PINNING SYMBOL PIN I/O DESCRIPTION SCL digital input serial clock of I2C-bus GND ground general pu...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ the read operation frequency. In this case the random block access modes are not supported because...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ During this time, control signals WE and IE will function as The address area reserved for the min...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 7.1.2 READ OPERATION The data output pins are not controlled by the OE pin and are forced into hig...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 7.1.3 POWER-UP AND INITIALIZATION 7.1.5 MEMORY ARBITRATION LOGIC AND SELF-REFRESH Reliable operati...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 7.2 Noise reduction function handbook, full pagewidth data input D-field delay data input D-field ...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ The main function of the noise reduction is shown in Fig.3. The averaging in chrominance can be sl...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ The start position, when the first phase of the 4 1 YUV The amplified signals, which correlate to ...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 7.2.5 NOISE SHAPE There is no ‘wrap around’ of subaddresses. Commands and data are processed as so...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ Table 6 Write registers REGISTER BIT NAME DEFAULT FUNCTION Subregister 20H to 23H (Ksteps of the l...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER ...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ CHARACTERISTICS VDD VDD(O) VDD(P) 3.0 to 3.6 V; Tamb to °C; 3 ns input transition times; unless ot...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ SYMBOL PARAMETER CONDITIONS MIN. TYP.(1) MAX. UNIT tsu(D) set-up time data inputs (D0 to D11) see ...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth N − 1N − 2 Tcy(SWCK) th(RSTW) tt tw(SWCKH) tw(SWCKL) tsu(RSTW) tsu(RSTW)t...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth start sequence serial input of write block address write latency write da...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth N − 1 disable disable N + 1 tsu(WE) th(WE) th(WE) tsu(WE) tw(WEL) tsu(D) ...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth N + 7N + 6N + 5N + 4N + 3N + 2N + 1N D0 to D11 N + 3N + 2N + 1 N + 6 N + ...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth N − 1 Tcy(SRCK) th(RSTR) tt tw(SRCKH) tw(SRCKL) tsu(RSTR)tsu(RSTR)th(RSTR...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth start sequence serial input of read block address read latency read data ...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth disable disable N + 3 N + 4 tsu(OE) th(OE) th(OE) tsu(OE) tw(OEL) t ACC t...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth WE and IE new new new new new new new D0 to D11 minimum number of SWCK cy...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth WE and IE new new new new new new new D0 to D11 maximum number of SWCK cy...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ handbook, full pagewidth reset signal serial clock RSTW RSTR RSTW RSTR SWCK SRCK SWCK SRCK D0(V0) ...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ APPLICATION INFORMATION handbook, full pagewidth UIN VIN SCL SWC D11 D11 RSTW D10 D10 WE D9 D4 SAA...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ PACKAGE OUTLINE SOJ40: plastic small outline package; 40 leads (J-bent); body width 10.16 mm SOT44...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ SOLDERING Use a double-wave soldering method comprising a turbulent wave with high upward pressure...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ 13.5 Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METH...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal spec...
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ NOTES
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Philips Semiconductors Preliminary specification 2.9-Mbit field memory with noise reduction SAA4956TJ NOTES
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