PHILIPS PMV31XN Data Sheet
Summary
This Philips PMV31XN uTrenchMOS extremely low level N-channel enhancement mode field-effect transistor datasheet provides complete electrical specifications for compact SOT23 surface-mount power switching applications. Covers TrenchMOS technology construction for ultra-low gate threshold voltage operation, very fast switching characteristics suitable for high-frequency power conversion, low on-state resistance of 31mOhm typical at 4.5V gate-source voltage and 1.5A drain current for reduced condu
Page 1 Text Content
PMV31XN µTrench MOS™ extremely low level FET Rev. 01 — 26 February 2003 Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology.
Product availability: PMV31XN in SOT23.
2. Features
Trench MOS™ technology Very fast switching Low threshold voltage Surface mount package.
3. Applications
Battery powered motor control High-speed switch in set top box power supplies.
4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol
gate (g) source (s) drain (d)
MBB076
MSB003Top view
SOT23
Page Summary Contents For PHILIPS PMV31XN Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 241.13 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What type of transistor technology does the PMV31XN use?
It features TrenchMOS™ technology, making it an N-channel enhancement mode FET.
What is the typical drain-source on-state resistance (Rds(on)) at 25°C?
The typical Rds(on) of the PMV31XN is 3137mΩ when V=4.5V and I=1.5A.
What are the absolute maximum voltage ratings for drain-source voltage (Vdsj)?
According to limiting values, the max Vdsj is +20 V dc and min Vdsj is -20 V dc.