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Philips PML260SN Data Sheet

Summary

Engineered for high-performance power switching, this N-channel TrenchMOS FET (PML260SN) features ultra-low on-state resistance and superior thermal management, making it ideal for DC-to-DC converters and portable appliances. This technical manual serves as a comprehensive resource for electrical engineers and circuit designers. It provides detailed absolute maximum ratings, operational charts (thermal impedance, current curves), pinning information, and application guidelines necessary for reliable integration into compact power electronics designs.

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查询PML260SN供应商

PML260SN N-channel Trench MOS standard level FET Rev. 02 — 29 May 2006 Product data sheet

1. Product profile

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a surface-mounted plastic package using Trench MOS technology.

1.2 Features Standard level threshold Low profile and small footprint Very low thermal impedance Low on-state resistance

1.3 Applications Primary side switching DC-to-DC converters Portable appliances

1.4 Quick reference data VDS ID 8.8

RDSon mΩ QGD 4.2 n C (typ)

2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S)

gate (G)

5, 6, 7, 8 drain (D)

mbb076

Transparent top view

SOT873-1 (HVSON8)

Page Summary Contents For Philips PML260SN Data Sheet

Page 1 查询PML260SN供应商 PML260SN N-channel Trench MOS standard level FET Rev. 02 — 29 May 2006 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effec...
Page 2 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PML260SN HVSON8 plastic therm...
Page 3 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 03ne36 03ne37 Tmb (°C) Tmb (°C) Ptot ID Pder %×= Ider %×= Ptot ID 25°C( 25°C( Fig 1. Normalized total power dissipation as a Fig...
Page 4 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resis...
Page 5 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 6. Characteristics Table 5. Characteristics Tj °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Stati...
Page 6 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 003aab063 003aab064 VGS (V) = 3.83.6 RDSon VGS (V) = VDS (V) ID (A) Tj °C Tj °C Fig 5. Output characteristics: drain current as ...
Page 7 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 03aa32 03aa35 10−1 VGS(th) ID (V) (A) min typ max Tj (°C) VGS (V) ID m A; VDS VGS Tj °C; VDS Fig 9. Gate-source threshold voltag...
Page 8 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 003aab080 003aab067 IS (A) Tj = 25 °C150 °C VSD (V) VDS (V) Tj °C and 150 °C; VGS VGS V; f MHz Fig 13. Source current as a funct...
Page 9 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 7. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3.3 × 3.3 × 0.8...
Page 10 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes PML260SN_2 Pro...
Page 11 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Devel...
Page 12 Philips Semiconductors PML260SN N-channel Trench MOS standard level FET 11. Contents Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 General description. . . . . . . . . . . . ...

Manual Details

Brand Philips
Pages 12
File Size 76.68 KB
Published July 06, 2026
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Frequently Asked Questions

What voltage range does the PML260SN FET support?

The drain-source voltage (VDS) is rated up to 200 V in optimal conditions.

What are the primary applications for this N-channel Transistor?

It is designed for use in primary side switching, DC-to-DC converters, and portable appliances.

How is the device packaged and mounted?

It uses a surface-mounted plastic package designated as HVSON8 (SOT873-1).

What are the absolute maximum limits for power dissipation?

The total power dissipation (Ptot) can reach -50 Wmb at 25°C.