# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Philips PBSS8110Z Data Sheet

Summary

The PBSS8110Z is a high-performance NPN low V transistor housed in an SOT223 package, engineered for demanding power electronics applications. Designed with high efficiency and low saturation voltage ($V_{CESat}$), it reliably handles 100V and 1A of collector current. This component is ideal for critical industrial, automotive, and telecom infrastructure uses, including driving LEDs/lamps, converting DC-to-DC power, or managing inductive loads like relays and motors. The accompanying manual provides comprehensive technical details, covering electrical characteristics, thermal limits, suggested mounting methods, and detailed usage guidelines for system integration.

📄 Preview PAGE OF 12

Page 1 Text Content

查询PBSS8110Z供应商

PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 26 April 2004 Product data sheet

1. Product profile

1.1 General description NPN low VCEsat transistor in a plastic SOT223 (SC-73) package.

1.2 Features SOT223 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation.

1.3 Applications Major application segments:

Automotive 42 V power Telecom infrastructure Industrial. DC-to-DC converter Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load drivers (e.g. relays, buzzers and motors).

1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage IC collector current (DC) ICM peak collector current RCEsat equivalent on-resistance mΩ

Page Summary Contents For Philips PBSS8110Z Data Sheet

Page 1 查询PBSS8110Z供应商 PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 26 April 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT223...
Page 2 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Discrete pinning Pin Description Simplified outline Symbol 2, 4 collector emitter sym016 To...
Page 3 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Param...
Page 4 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistanc...
Page 5 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tj °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit...
Page 6 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa497 001aaa495 VBE (m V) IC (m A) IC (m A) VCE V. VCE V. (1) Tamb °C. (1) Tamb −55 °C. (2) Tamb °C. (2) Tamb °C. (3) T...
Page 7 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa506 001aaa498 VBEsat (m V) VCEsat (m V) IC (m A) IC (m A) IC/IB 50; Tamb °C. IC/IB 10. (1) Tamb −55 °C. (2) Tamb °C. ...
Page 8 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa496 001aaa501 (1) RCEsat VCE (V) IC (m A) Tamb °C. IC/IB 10. (1) IB m A. (1) Tamb °C. (2) IB 31.5 m A. (2) Tamb °C. (...
Page 9 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Package outline Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 e1 Mbp detail X sc...
Page 10 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Revision history Table 8: Revision history Document ID Release date Data sheet status Change notice Order number Superse...
Page 11 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 10. Data sheet status Level Data sheet status Product status Definition Objective data Development This data sheet contains...
Page 12 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor 14. Contents Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 General description. . . . . . . . . ....

Manual Details

Brand Philips
Pages 12
File Size 90.62 KB
Published July 04, 2026
2 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What is the max collector-emitter voltage of PBSS8110Z?

The maximum collector-emitter voltage is 100 V.

What package does this transistor use?

It uses a plastic SOT223 (SC-73) surface mounted package.

What are typical applications of PBSS8110Z?

It is used in automotive 42V power, telecom, industrial, DC-DC converters, peripheral and LED drivers, and inductive load drivers.

What is the marking code for PBSS8110Z?

The marking code is PB8110, and it is made in Hong Kong.