# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Philips PBSS3515M Data Sheet

Summary

This datasheet details the PBSS3515M PNP transistor, a 15 V, 0.5 A component designed for low VCEsat applications. It targets engineers and designers needing efficient power management solutions, such as DC-DC converters and peripheral drivers, within compact SOT883 packages.

📄 Preview PAGE OF 9

Page 1 Text Content

查询PBSS3515M供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BOTTOM VIEW

PBSS3515M V, 0.5 PNP low VCEsat (BISS) transistor Product specification Jul

Page Summary Contents For Philips PBSS3515M Data Sheet

Page 1 查询PBSS3515M供应商 DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW PBSS3515M V, 0.5 PNP low VCEsat (BISS) transistor Product specification Jul
Page 2 Philips Semiconductors Product specification PBSS3515M PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High co...
Page 3 Philips Semiconductors Product specification PBSS3515M PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS M...
Page 4 Philips Semiconductors Product specification PBSS3515M PNP low VCEsat (BISS) transistor CHARACTERISTICS Tamb °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collect...
Page 5 Philips Semiconductors Product specification PBSS3515M PNP low VCEsat (BISS) transistor MLD665 MLD667 handbook, halfpage handbook, halfpage VBE (m V) h FE (1) IC (m A) IC (m A) VCE −2 V. VCE −2 V. (1)...
Page 6 Philips Semiconductors Product specification PBSS3515M PNP low VCEsat (BISS) transistor MLD666 MLD670 −1200 handbook, halfpage handbook, halfpage RCEsat IC (m A) VCE (V) Tamb °C. IC/IB 20. (1) IB −7 m...
Page 7 Philips Semiconductors Product specification PBSS3515M PNP low VCEsat (BISS) transistor PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 0.5 1 mm sc...
Page 8 Philips Semiconductors Product specification PBSS3515M PNP low VCEsat (BISS) transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL DEFINITION STATUS(1) STATUS(2)(3) Objective data Development This dat...
Page 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 For sales offices addresses send e-mail to: sal...

Manual Details

Brand Philips
Pages 9
File Size 62.60 KB
Published June 22, 2026
10 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What is the maximum collector current for the PBSS3515M?

The DC collector current (I_C) max is -500 mA, with a peak collector current (I_CM) of -1 A.

What is the pinout configuration of the PBSS3515M?

Pin 1 is base, pin 2 is emitter, and pin 3 is collector (bottom view).

How should the PBSS3515M be soldered?

Reflow soldering is the only recommended soldering method according to the datasheet.

What is the typical collector-emitter saturation voltage (V_CESat)?

At I_C = -500 mA and I_B = -50 mA, V_CESat is typically less than 250 mV.

What is the complementary NPN transistor for the PBSS3515M?

The NPN complement is the PBSS2515M.