Philips PBSS2540F Data Sheet
Summary
This general-purpose NPN transistor is designed for switching, muting, and audio amplification in low voltage requirements. The datasheet provides complete specifications, detailing its low collector-emitter saturation voltage, high current capability, enhanced thermal performance, and operational parameters across varying temperatures. It is ideally suited for reliable use in portable, battery-driven consumer electronics, including mobile phones and handheld cameras.
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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS2540F 40 V low VCEsat NPN transistor Product specification Oct
Page Summary Contents For Philips PBSS2540F Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 8 |
| File Size | 60.28 KB |
| Published | July 04, 2026 |
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Frequently Asked Questions
What is the maximum collector current (I_c) for this transistor?
The continuous DC collector current (I_C) must be less than 500 mA, while the peak collector current is limited to 1 A MC.
What are the key general applications for PBSS2540F?
It can be used for general purpose switching and muting, low frequency driver circuits, or audio frequency general purpose amplifier applications.
How low is the performance at high current levels?
The collector-emitter saturation voltage (V_CEsat) is specified to be less than 500 mΩ (when I = 500 mA and I=50 mA respectively).
What are the operating temperature limits for the transistor?
The junction operating temperature range (Tj) is from -150°C to +150 °C, and the ambient temperature must be between -65°C and +150°C.