Philips PBSS2515VPN Data Sheet

Summary

This comprehensive technical datasheet provides detailed specifications for the PBSS2515VPN CEsat low V NPN/PNP transistor pair. It covers critical performance characteristics, including saturation voltage, electrical ratings, and thermal behavior across various operating conditions. Ideal for electronics engineers and product designers, this data sheet supports the development of general-purpose switching circuitry, low-frequency drivers, audio amplifiers, and robust battery-powered devices such as mobile phones and cameras.

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DATA SHEET

PBSS2515VPN V low VCEsat NPN/PNP transistor Product specification Nov Supersedes data of 2001 Aug 31

Page Summary Contents For Philips PBSS2515VPN Data Sheet

Page 1 查询PBSS2515VPN供应商 DISCRETE SEMICONDUCTORS DATA SHEET PBSS2515VPN V low VCEsat NPN/PNP transistor Product specification Nov Supersedes data of 2001 Aug 31

Page 2 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN FEATURES QUICK REFERENCE DATA m W total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 1.2 mm ultr...

Page 3 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS ...

Page 4 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN CHARACTERISTICS Tamb °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transis...

Page 5 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN MLD643 MLD645 handbook, halfpage handbook, halfpage IC (m A) IC (m A) TR1 (NPN) VCE V. TR1 (NPN) VCE V. (1) Tam...

Page 6 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN MLD648 MLD644 handbook, halfpage handbook, halfpage RCEsat IC (Ω) (m A) IC (m A) VCE (V) TR1 (NPN) Tamb °C. (1)...

Page 7 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN MLD649 MLD651 handbook, halfpage handbook, halfpage VBE (m V) h FE (1) IC (m A) IC (m A) TR2 (PNP) VCE −2 V. TR...

Page 8 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN MLD654 MLD650 −1200 handbook, halfpage handbook, halfpage RCEsat IC (m A) VCE (V) TR2 (PNP) Tamb °C. (1) IB −7 ...

Page 9 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 pin 1 index e1 bp detail X scale DIMENSIONS (mm...

Page 10 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN DATA SHEET STATUS PRODUCT DATA SHEET STATUS(1) DEFINITIONS STATUS(2) Objective data Development This data sheet...

Page 11 Philips Semiconductors Product specification V low VCEsat NPN/PNP transistor PBSS2515VPN NOTES

Page 12 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 For sales offices addresses send e-mail to: sal...

Manual Details

Brand	Philips
Pages	12
File Size	86.21 KB
Published	June 22, 2026

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Frequently Asked Questions

What is the total power dissipation for this transistor?

The maximum total power dissipation varies based on ambient temperature, reaching up to 300 mW.

How does this component reduce PCB requirements?

It replaces two SC75/SC89 packaged transistors, significantly reducing required PCB area and lowering pick-and-place costs.

What is the recommended soldering method?

The only recommended soldering method specified is reflow soldering.

What is the collector-emitter saturation voltage (VCEsat)?

Typically, the Vce sat ranges from 25 mV to 300 mΩ depending on the specific condition and current draw.