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Philips PBSS2515M Data Sheet

Summary

The PBSS2515M is a compact NPN BISS transistor designed for efficient power management and peripheral driving applications, rated at 15V and 0.5A. This technical datasheet provides comprehensive electrical guidelines, including thermal characteristics, absolute maximum ratings, IC curves, and operational parameters. It is intended for electrical engineers and circuit designers requiring a high-performance component for DC-DC converters, battery chargers, or low-voltage LED/inductive load control systems.

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DISCRETE SEMICONDUCTORS

DATA SHEET

BOTTOM VIEW

PBSS2515M V, 0.5 NPN low VCEsat (BISS) transistor Product specification Sep Supersedes data of 2003 Jun 17

Page Summary Contents For Philips PBSS2515M Data Sheet

Page 1 查询PBSS2515M供应商 DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW PBSS2515M V, 0.5 NPN low VCEsat (BISS) transistor Product specification Sep Supersedes data of 2003 Jun 17
Page 2 Philips Semiconductors Product specification PBSS2515M NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High co...
Page 3 Philips Semiconductors Product specification PBSS2515M NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS M...
Page 4 Philips Semiconductors Product specification PBSS2515M NPN low VCEsat (BISS) transistor CHARACTERISTICS Tamb °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collect...
Page 5 Philips Semiconductors Product specification PBSS2515M NPN low VCEsat (BISS) transistor MLE098 MLE100 handbook, halfpage handbook, halfpage IC (m A) IC (m A) VCE V. VCE V. (1) Tamb °C. (1) Tamb −55 °C...
Page 6 Philips Semiconductors Product specification PBSS2515M NPN low VCEsat (BISS) transistor MLE099 MLE103 handbook, halfpage (2)(3) (1) handbook, halfpage (A) RCEsat 0.8 (4) (Ω) VCE (V) IC (m A) Tamb °C. ...
Page 7 Philips Semiconductors Product specification PBSS2515M NPN low VCEsat (BISS) transistor PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 0.5 1 mm sc...
Page 8 Philips Semiconductors Product specification PBSS2515M NPN low VCEsat (BISS) transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL DEFINITION STATUS(1) STATUS(2)(3) Objective data Development This dat...
Page 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 For sales offices addresses send e-mail to: sal...

Manual Details

Brand Philips
Pages 9
File Size 64.11 KB
Published July 12, 2026
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Frequently Asked Questions

What is the recommended method for soldering this transistor?

Reflow soldering is specified as the only recommended soldering method.

What are its primary application areas?

It can be used in power management (DC-DC converters, supply line switching) or as a peripheral driver for loads like LEDs and relays.

What is the maximum continuous collector current rating (Ic)?

The steady DC collector current (Ic) is 500 mA. It has a peak capacity of up to 1 A.

Is there a PNP complement available?

Yes, its marked PNP complement is PBSS3515M.