PHILIPS BLF548 Data Sheet
Summary
This datasheet provides comprehensive technical specifications for the BLF548 UHF push-pull power MOS transistor. Ideal for high-frequency communications transmitter applications, this N-channel vertical D-MOS component offers high gain and excellent thermal stability in a reliable SOT262A package. The manual details RF performance curves, operating limits, electrical characteristics (such as $R_{\text{DSon}}$), and critical handling instructions required by engineers and designers integrating the device into sensitive RF circuits.
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DATA SHEET
BLF548 UHF push-pull power MOS transistor Product specification Sep Supersedes data of Oct
Page Summary Contents For PHILIPS BLF548 Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 15 |
| File Size | 113.75 KB |
| Published | July 04, 2026 |
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Frequently Asked Questions
What precautions must be taken when disposing of this product?
The product contains beryllium oxide and must not be thrown out with general or domestic waste; it must be disposed of as chemical or special waste.
What kind of applications is the BLF548 designed for?
It is a vertical D-MOS transistor designed specifically for communications transmitter applications in the UHF frequency range.
What are the absolute maximum operating voltages?
The absolute maximum drain-source voltage (VDS) listed is -65 V, and the gate-source voltage (VGS) limit is ±20 V.
How should I ensure safe power handling for this transistor?
Power dissipation must be monitored using the provided derating curves to prevent damage, especially when operating in short-time vs. continuous modes.